Abstract
Device reliability is a major challenge for GaN microelectronics. For example, AlGaN/GaN-based HFETs developed for next-generation millimeter-wave communication links and radar systems still lack the required reliability for real-life applications, even though their performance has generally reached an acceptable level. Consequently, improving reliability has been identified as a key task in DARPA's latest wide-bandgap program
| Translated title of the contribution | Complementary techniques expose GaN transistor defects |
|---|---|
| Original language | English |
| Journal | Compound Semiconductor |
| Volume | 9(11) |
| Publication status | Published - 2005 |
Bibliographical note
Publisher: Instistute of Physics Publishing LtdResearch Groups and Themes
- CDTR