Abstract
We investigate the effect of LaTiO3 insertion at the interface between LaAlO3 and TiO2 terminated {100} SrTiO3 for a series of LaAlO3 and LaTiO3 thicknesses. A clear increase of the carrier density was observed while the Hall mobility was largely unchanged. In structures with LaAlO3 thickness similar to 3 unit cells, close to the critical thickness for conductivity, as little as 0.25 unit cells of LaTiO3 drives an insulator-to-metal transition. These samples show a strong dependence of the conductivity on voltage with electrostatic back-gating, which can be understood in a two-carrier picture, and dominated by the change in carrier density at the interface. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794410]
Original language | English |
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Article number | 091601 |
Number of pages | 4 |
Journal | Applied Physics Letters |
Volume | 102 |
Issue number | 9 |
DOIs | |
Publication status | Published - 4 Mar 2013 |
Keywords
- LAALO3/SRTIO3 INTERFACE
- SUPERCONDUCTIVITY
- SUPERLATTICES
- COEXISTENCE
- OXIDES
- CHARGE
- SI