Contactless thermal boundary resistance measurement of GaN-on-diamond wafers

James W. Pomeroy*, Roland Baranyai Simon, Huarui Sun, Daniel Francis, Firooz Faili, Daniel J. Twitchen, Martin Kuball

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

32 Citations (Scopus)
436 Downloads (Pure)

Abstract

Low thermal resistance GaN-on-diamond wafers offer enhanced thermal management with respect to GaN-on-SiC devices. The GaN/diamond interfacial thermal resistance can contribute significantly to the total device thermal resistance and must therefore be minimized to gain the maximum benefit from GaN-on-diamond. A contactless thermoreflectance measurement technique has been developed, which can be used after wafer growth and before device fabrication, enabling rapid feedback about the influence of growth parameters on interfacial thermal resistance. A measured 2× reduction in the GaN/diamond interfacial resistance is achieved by reducing the dielectric thickness between the GaN and diamond from 90 to 50 nm, enabling a potential 25% increase in transistor power dissipation for GaN-on-diamond.

Original languageEnglish
Article number6892957
Pages (from-to)1007-1009
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number10
DOIs
Publication statusPublished - 1 Oct 2014

Structured keywords

  • CDTR

Keywords

  • AlGaN/GaN
  • diamond
  • HEMTs
  • thermal management
  • thermal resistance
  • thermoreflectance

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