Control of quantum dot excitons by lateral electric fields

V. Stavarache, D. Reuter, A. D. Wieck, M. Schwab, D. R. Yakovlev, R. Oulton, M. Bayer

Research output: Contribution to journalArticle (Academic Journal)peer-review

20 Citations (Scopus)

Abstract

The control of exciton wave functions in (In,Ga)As/GaAs quantum dots through lateral electric fields has been studied by photoluminescence (PL) spectroscopy. p-i-n and n-i-n lateral gate structures were fabricated by ion implantation and subsequent thermal annealing. While single dot spectroscopy shows only small exciton energy shifts when external bias is varied, time-resolved PL reveals strong changes of the exciton lifetime and therefore of the underlying electron-hole overlap, as a consequence of significant lateral carrier displacements within the dots. (c) 2006 American Institute of Physics.

Original languageEnglish
Article number123105
Pages (from-to)-
Number of pages3
JournalApplied Physics Letters
Volume89
Issue number12
DOIs
Publication statusPublished - 18 Sep 2006

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