Control of quantum dot excitons by lateral electric fields

V. Stavarache; D. Reuter; A. D. Wieck; M. Schwab; D. R. Yakovlev; R. Oulton; M. Bayer

doi:10.1063/1.2345233

Control of quantum dot excitons by lateral electric fields

V. Stavarache, D. Reuter, A. D. Wieck, M. Schwab, D. R. Yakovlev, R. Oulton, M. Bayer

School of Physics

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20 Citations (Scopus)

Abstract

The control of exciton wave functions in (In,Ga)As/GaAs quantum dots through lateral electric fields has been studied by photoluminescence (PL) spectroscopy. p-i-n and n-i-n lateral gate structures were fabricated by ion implantation and subsequent thermal annealing. While single dot spectroscopy shows only small exciton energy shifts when external bias is varied, time-resolved PL reveals strong changes of the exciton lifetime and therefore of the underlying electron-hole overlap, as a consequence of significant lateral carrier displacements within the dots. (c) 2006 American Institute of Physics.

Original language	English
Article number	123105
Pages (from-to)	-
Number of pages	3
Journal	Applied Physics Letters
Volume	89
Issue number	12
DOIs	https://doi.org/10.1063/1.2345233
Publication status	Published - 18 Sept 2006

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Photonics and Quantum

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title = "Control of quantum dot excitons by lateral electric fields",

abstract = "The control of exciton wave functions in (In,Ga)As/GaAs quantum dots through lateral electric fields has been studied by photoluminescence (PL) spectroscopy. p-i-n and n-i-n lateral gate structures were fabricated by ion implantation and subsequent thermal annealing. While single dot spectroscopy shows only small exciton energy shifts when external bias is varied, time-resolved PL reveals strong changes of the exciton lifetime and therefore of the underlying electron-hole overlap, as a consequence of significant lateral carrier displacements within the dots. (c) 2006 American Institute of Physics.",

author = "V. Stavarache and D. Reuter and Wieck, \{A. D.\} and M. Schwab and Yakovlev, \{D. R.\} and R. Oulton and M. Bayer",

year = "2006",

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doi = "10.1063/1.2345233",

language = "English",

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T1 - Control of quantum dot excitons by lateral electric fields

AU - Stavarache, V.

AU - Reuter, D.

AU - Wieck, A. D.

AU - Schwab, M.

AU - Yakovlev, D. R.

AU - Oulton, R.

AU - Bayer, M.

PY - 2006/9/18

Y1 - 2006/9/18

N2 - The control of exciton wave functions in (In,Ga)As/GaAs quantum dots through lateral electric fields has been studied by photoluminescence (PL) spectroscopy. p-i-n and n-i-n lateral gate structures were fabricated by ion implantation and subsequent thermal annealing. While single dot spectroscopy shows only small exciton energy shifts when external bias is varied, time-resolved PL reveals strong changes of the exciton lifetime and therefore of the underlying electron-hole overlap, as a consequence of significant lateral carrier displacements within the dots. (c) 2006 American Institute of Physics.

AB - The control of exciton wave functions in (In,Ga)As/GaAs quantum dots through lateral electric fields has been studied by photoluminescence (PL) spectroscopy. p-i-n and n-i-n lateral gate structures were fabricated by ion implantation and subsequent thermal annealing. While single dot spectroscopy shows only small exciton energy shifts when external bias is varied, time-resolved PL reveals strong changes of the exciton lifetime and therefore of the underlying electron-hole overlap, as a consequence of significant lateral carrier displacements within the dots. (c) 2006 American Institute of Physics.

U2 - 10.1063/1.2345233

DO - 10.1063/1.2345233

M3 - Article (Academic Journal)

SN - 0003-6951

VL - 89

SP - -

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 123105

ER -

Control of quantum dot excitons by lateral electric fields

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