Correlated electron phenomena in ultra-low-disorder quantum point contacts and quantum wires

DJ Reilly; GR Facer; AS Dzurak; RG Clark; NE Lumpkin; JL O'Brien; LN Pfeiffer; KW West

doi:10.1109/COMMAD.1998.791696

Correlated electron phenomena in ultra-low-disorder quantum point contacts and quantum wires

DJ Reilly, GR Facer, AS Dzurak, RG Clark, NE Lumpkin, JL O'Brien, LN Pfeiffer, KW West

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

Abstract

The study of electron interaction effects in one dimensional transport requires heterostructures with ultra-low disorder. We have developed a novel GaAs/AlGaAs structure which avoids the random impurity potential present in conventional surface-gated HEMT devices by using epitaxially grown gates to produce an enhancement mode FET. Our quantum point contacts (QPCs) exhibit almost ideal conductance quantisation, however, below 2e2/h additional structure is observed. Such structure has also been seen in QPCs fabricated from ultra-high-mobility surface gated HEMTs and has been interpreted as evidence for a spin-correlated state. In our quantum wire devices this additional structure is further enhanced, indicating that the effective length of the 1D region may be a significant factor in determining the strength of correlation

Translated title of the contribution	Correlated electron phenomena in ultra-low-disorder quantum point contacts and quantum wires
Original language	English
Title of host publication	Proceedings of Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD'98), Perth, Australia
DOIs	https://doi.org/10.1109/COMMAD.1998.791696
Publication status	Published - 14 Dec 1998

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@inproceedings{b6eed2d17913442998654d89f2de560b,

title = "Correlated electron phenomena in ultra-low-disorder quantum point contacts and quantum wires",

abstract = "The study of electron interaction effects in one dimensional transport requires heterostructures with ultra-low disorder. We have developed a novel GaAs/AlGaAs structure which avoids the random impurity potential present in conventional surface-gated HEMT devices by using epitaxially grown gates to produce an enhancement mode FET. Our quantum point contacts (QPCs) exhibit almost ideal conductance quantisation, however, below 2e2/h additional structure is observed. Such structure has also been seen in QPCs fabricated from ultra-high-mobility surface gated HEMTs and has been interpreted as evidence for a spin-correlated state. In our quantum wire devices this additional structure is further enhanced, indicating that the effective length of the 1D region may be a significant factor in determining the strength of correlation",

author = "DJ Reilly and GR Facer and AS Dzurak and RG Clark and NE Lumpkin and JL O'Brien and LN Pfeiffer and KW West",

year = "1998",

month = dec,

day = "14",

doi = "10.1109/COMMAD.1998.791696",

language = "English",

isbn = "0780345134",

booktitle = "Proceedings of Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD'98), Perth, Australia",

}

Correlated electron phenomena in ultra-low-disorder quantum point contacts and quantum wires. / Reilly, DJ; Facer, GR; Dzurak, AS et al.
Proceedings of Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD'98), Perth, Australia. 1998.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Correlated electron phenomena in ultra-low-disorder quantum point contacts and quantum wires

AU - Reilly, DJ

AU - Facer, GR

AU - Dzurak, AS

AU - Clark, RG

AU - Lumpkin, NE

AU - O'Brien, JL

AU - Pfeiffer, LN

AU - West, KW

PY - 1998/12/14

Y1 - 1998/12/14

N2 - The study of electron interaction effects in one dimensional transport requires heterostructures with ultra-low disorder. We have developed a novel GaAs/AlGaAs structure which avoids the random impurity potential present in conventional surface-gated HEMT devices by using epitaxially grown gates to produce an enhancement mode FET. Our quantum point contacts (QPCs) exhibit almost ideal conductance quantisation, however, below 2e2/h additional structure is observed. Such structure has also been seen in QPCs fabricated from ultra-high-mobility surface gated HEMTs and has been interpreted as evidence for a spin-correlated state. In our quantum wire devices this additional structure is further enhanced, indicating that the effective length of the 1D region may be a significant factor in determining the strength of correlation

AB - The study of electron interaction effects in one dimensional transport requires heterostructures with ultra-low disorder. We have developed a novel GaAs/AlGaAs structure which avoids the random impurity potential present in conventional surface-gated HEMT devices by using epitaxially grown gates to produce an enhancement mode FET. Our quantum point contacts (QPCs) exhibit almost ideal conductance quantisation, however, below 2e2/h additional structure is observed. Such structure has also been seen in QPCs fabricated from ultra-high-mobility surface gated HEMTs and has been interpreted as evidence for a spin-correlated state. In our quantum wire devices this additional structure is further enhanced, indicating that the effective length of the 1D region may be a significant factor in determining the strength of correlation

U2 - 10.1109/COMMAD.1998.791696

DO - 10.1109/COMMAD.1998.791696

M3 - Conference Contribution (Conference Proceeding)

SN - 0780345134

BT - Proceedings of Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD'98), Perth, Australia

ER -

Correlated electron phenomena in ultra-low-disorder quantum point contacts and quantum wires

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