Correlated electron phenomena in ultra-low-disorder quantum point contacts and quantum wires

DJ Reilly, GR Facer, AS Dzurak, RG Clark, NE Lumpkin, JL O'Brien, LN Pfeiffer, KW West

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

Abstract

The study of electron interaction effects in one dimensional transport requires heterostructures with ultra-low disorder. We have developed a novel GaAs/AlGaAs structure which avoids the random impurity potential present in conventional surface-gated HEMT devices by using epitaxially grown gates to produce an enhancement mode FET. Our quantum point contacts (QPCs) exhibit almost ideal conductance quantisation, however, below 2e2/h additional structure is observed. Such structure has also been seen in QPCs fabricated from ultra-high-mobility surface gated HEMTs and has been interpreted as evidence for a spin-correlated state. In our quantum wire devices this additional structure is further enhanced, indicating that the effective length of the 1D region may be a significant factor in determining the strength of correlation
Translated title of the contributionCorrelated electron phenomena in ultra-low-disorder quantum point contacts and quantum wires
Original languageEnglish
Title of host publicationProceedings of Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD'98), Perth, Australia
DOIs
Publication statusPublished - 14 Dec 1998

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    Reilly, DJ., Facer, GR., Dzurak, AS., Clark, RG., Lumpkin, NE., O'Brien, JL., Pfeiffer, LN., & West, KW. (1998). Correlated electron phenomena in ultra-low-disorder quantum point contacts and quantum wires. In Proceedings of Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD'98), Perth, Australia https://doi.org/10.1109/COMMAD.1998.791696