Correlation between crystal purity and the charge density wave in 1T-VSe2

Charles J Sayers*, Liam S Farrar, Simon J Bending, Mattia Cattelan, Alfred Jones, Neil A Fox, Gabriele Kociok-Köhn, K Koshmak, Jude Laverock, L Pasquali, Enrico Da Como

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

12 Citations (Scopus)
152 Downloads (Pure)


We examine the charge density wave (CDW) properties of 1T-VSe2 crystals grown by chemical vapor transport (CVT) under varying conditions. Specifically, we find that upon lowering the growth temperature (Tg < 630◦C), there is a significant increase in both the CDW transition temperature and the residual resistance ratio (RRR) obtained from electrical transport measurements. Using x-ray photoelectron spectroscopy, we correlate the observed CDW properties with stoichiometry and the nature of defects. In addition, we have optimized a method to grow ultrahigh-purity 1T-VSe2 crystals with a CDW transition temperature TCDW = (112.7 ± 0.8) K and maximum residual resistance ratio RRR ≈ 49, which is the highest reported thus far. This work highlights the sensitivity of the CDW in 1T-VSe2 to defects and overall stoichiometry and the importance of controlling the crystal growth conditions of strongly correlated transition metal dichalcogenides.
Original languageEnglish
Article number025002
JournalPhysical Review Materials
Publication statusPublished - 11 Feb 2020


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