Correlation between crystal purity and the charge density wave in 1T-VSe2

Charles J Sayers; Liam S Farrar; Simon J Bending; Mattia Cattelan; Alfred Jones; Neil A Fox; Gabriele Kociok-Köhn; K Koshmak; Jude Laverock; L Pasquali; Enrico Da Como

doi:10.1103/PhysRevMaterials.4.025002

Correlation between crystal purity and the charge density wave in 1T-VSe2

Charles J Sayers^*, Liam S Farrar, Simon J Bending, Mattia Cattelan, Alfred Jones, Neil A Fox, Gabriele Kociok-Köhn, K Koshmak, Jude Laverock, L Pasquali, Enrico Da Como

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

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Abstract

We examine the charge density wave (CDW) properties of 1T-VSe2 crystals grown by chemical vapor transport (CVT) under varying conditions. Specifically, we find that upon lowering the growth temperature (Tg < 630◦C), there is a significant increase in both the CDW transition temperature and the residual resistance ratio (RRR) obtained from electrical transport measurements. Using x-ray photoelectron spectroscopy, we correlate the observed CDW properties with stoichiometry and the nature of defects. In addition, we have optimized a method to grow ultrahigh-purity 1T-VSe2 crystals with a CDW transition temperature TCDW = (112.7 ± 0.8) K and maximum residual resistance ratio RRR ≈ 49, which is the highest reported thus far. This work highlights the sensitivity of the CDW in 1T-VSe2 to defects and overall stoichiometry and the importance of controlling the crystal growth conditions of strongly correlated transition metal dichalcogenides.

Original language	English
Article number	025002
Journal	Physical Review Materials
Volume	4
DOIs	https://doi.org/10.1103/PhysRevMaterials.4.025002
Publication status	Published - 11 Feb 2020

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@article{b3a79af319234bfc903e332202f75c0c,

title = "Correlation between crystal purity and the charge density wave in 1T-VSe2",

abstract = "We examine the charge density wave (CDW) properties of 1T-VSe2 crystals grown by chemical vapor transport (CVT) under varying conditions. Specifically, we find that upon lowering the growth temperature (Tg < 630◦C), there is a significant increase in both the CDW transition temperature and the residual resistance ratio (RRR) obtained from electrical transport measurements. Using x-ray photoelectron spectroscopy, we correlate the observed CDW properties with stoichiometry and the nature of defects. In addition, we have optimized a method to grow ultrahigh-purity 1T-VSe2 crystals with a CDW transition temperature TCDW = (112.7 ± 0.8) K and maximum residual resistance ratio RRR ≈ 49, which is the highest reported thus far. This work highlights the sensitivity of the CDW in 1T-VSe2 to defects and overall stoichiometry and the importance of controlling the crystal growth conditions of strongly correlated transition metal dichalcogenides.",

author = "Sayers, {Charles J} and Farrar, {Liam S} and Bending, {Simon J} and Mattia Cattelan and Alfred Jones and Fox, {Neil A} and Gabriele Kociok-K{\"o}hn and K Koshmak and Jude Laverock and L Pasquali and {Da Como}, Enrico",

year = "2020",

month = feb,

day = "11",

doi = "10.1103/PhysRevMaterials.4.025002",

language = "English",

volume = "4",

journal = "Physical Review Materials",

issn = "2475-9953",

publisher = "American Physical Society (APS)",

}

Correlation between crystal purity and the charge density wave in 1T-VSe2. / Sayers, Charles J; Farrar, Liam S; Bending, Simon J; Cattelan, Mattia; Jones, Alfred; Fox, Neil A; Kociok-Köhn, Gabriele; Koshmak, K; Laverock, Jude; Pasquali, L; Da Como, Enrico.

In: Physical Review Materials, Vol. 4, 025002, 11.02.2020.

Research output: Contribution to journal › Article (Academic Journal) › peer-review

TY - JOUR

T1 - Correlation between crystal purity and the charge density wave in 1T-VSe2

AU - Sayers, Charles J

AU - Farrar, Liam S

AU - Bending, Simon J

AU - Cattelan, Mattia

AU - Jones, Alfred

AU - Fox, Neil A

AU - Kociok-Köhn, Gabriele

AU - Koshmak, K

AU - Laverock, Jude

AU - Pasquali, L

AU - Da Como, Enrico

PY - 2020/2/11

Y1 - 2020/2/11

N2 - We examine the charge density wave (CDW) properties of 1T-VSe2 crystals grown by chemical vapor transport (CVT) under varying conditions. Specifically, we find that upon lowering the growth temperature (Tg < 630◦C), there is a significant increase in both the CDW transition temperature and the residual resistance ratio (RRR) obtained from electrical transport measurements. Using x-ray photoelectron spectroscopy, we correlate the observed CDW properties with stoichiometry and the nature of defects. In addition, we have optimized a method to grow ultrahigh-purity 1T-VSe2 crystals with a CDW transition temperature TCDW = (112.7 ± 0.8) K and maximum residual resistance ratio RRR ≈ 49, which is the highest reported thus far. This work highlights the sensitivity of the CDW in 1T-VSe2 to defects and overall stoichiometry and the importance of controlling the crystal growth conditions of strongly correlated transition metal dichalcogenides.

AB - We examine the charge density wave (CDW) properties of 1T-VSe2 crystals grown by chemical vapor transport (CVT) under varying conditions. Specifically, we find that upon lowering the growth temperature (Tg < 630◦C), there is a significant increase in both the CDW transition temperature and the residual resistance ratio (RRR) obtained from electrical transport measurements. Using x-ray photoelectron spectroscopy, we correlate the observed CDW properties with stoichiometry and the nature of defects. In addition, we have optimized a method to grow ultrahigh-purity 1T-VSe2 crystals with a CDW transition temperature TCDW = (112.7 ± 0.8) K and maximum residual resistance ratio RRR ≈ 49, which is the highest reported thus far. This work highlights the sensitivity of the CDW in 1T-VSe2 to defects and overall stoichiometry and the importance of controlling the crystal growth conditions of strongly correlated transition metal dichalcogenides.

U2 - 10.1103/PhysRevMaterials.4.025002

DO - 10.1103/PhysRevMaterials.4.025002

M3 - Article (Academic Journal)

VL - 4

JO - Physical Review Materials

JF - Physical Review Materials

SN - 2475-9953

M1 - 025002

ER -