Abstract
We examine the charge density wave (CDW) properties of 1T-VSe2 crystals grown by chemical vapor
transport (CVT) under varying conditions. Specifically, we find that upon lowering the growth temperature
(Tg < 630◦C), there is a significant increase in both the CDW transition temperature and the residual resistance
ratio (RRR) obtained from electrical transport measurements. Using x-ray photoelectron spectroscopy, we
correlate the observed CDW properties with stoichiometry and the nature of defects. In addition, we have
optimized a method to grow ultrahigh-purity 1T-VSe2 crystals with a CDW transition temperature TCDW =
(112.7 ± 0.8) K and maximum residual resistance ratio RRR ≈ 49, which is the highest reported thus far. This
work highlights the sensitivity of the CDW in 1T-VSe2 to defects and overall stoichiometry and the importance
of controlling the crystal growth conditions of strongly correlated transition metal dichalcogenides.
Original language | English |
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Article number | 025002 |
Journal | Physical Review Materials |
Volume | 4 |
DOIs | |
Publication status | Published - 11 Feb 2020 |