Abstract
In this paper, the crosstalk-induced shoot-through current and induced gate voltage of SiC planar MOSFETs, SiC symmetrical double-trench MOSFETs and SiC asymmetrical double-trench MOSFETs is investigated on a half-bridge circuit to analyse the impact of temperature, drain-source voltage switching rate, gate resistance and load current level on crosstalk-induced properties of different SiC MOSFET structures. It shows that due to the smaller gate-source capacitance, the two double-trench MOSFETs exhibit higher induced gate voltage during crosstalk with the same external gate resistance, which together with the higher transconductance, yield higher shoot-through current than the planar MOSFET. Accordingly, their shoot-through current decreases with increasing of the load current while the planar MOSFET exhibits an opposite trend. The different trend of shoot-through current with temperature on DUTs reveals that the crosstalk in different device structures are dominated by different mechanisms, i.e. threshold voltage and channel mobility with the gate-source capacitance influencing the amplitude. Impact of bias temperature instability with positive and negative gate stressing is measured with a range of stress and recover periods at temperateness ranging between 25 C to 175 C. These measurements show that the peak shoot-through correlates with the threshold drift, though with less sensitivity for SiC symmetrical and asymmetrical double-trench MOSFETs compared with the planar SiC MOSFET where the inter-dependence is pronounced. A model is developed for the induced gate voltage and shoot-through current during crosstalk with channel current considered. The comparison of the model results with measurement confirms its capability to predict crosstalk in different MOSFET structures.
Original language | English |
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Pages (from-to) | 188-202 |
Number of pages | 15 |
Journal | IEEE Open Journal of the Industrial Electronics Society |
Volume | 3 |
DOIs | |
Publication status | Published - 22 Mar 2022 |
Bibliographical note
Publisher Copyright:Author
Keywords
- MOSFET
- silicon carbide
- Crosstalk
- Double-trench
- Bias temperature instability
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Dive into the research topics of 'Crosstalk Induced Shoot-Through in BTI-Stressed Symmetrical & Asymmetrical Double-Trench SiC Power MOSFETs'. Together they form a unique fingerprint.Student theses
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Reliability analysis of planar and symmetrical & asymmetrical trench discrete SiC Power MOSFETs
Yang, J. (Author), Jahdi, S. (Supervisor) & Stark, B. (Supervisor), 5 Dec 2023Student thesis: Doctoral Thesis › Doctor of Philosophy (PhD)
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