Cryogenic characterization of commercial SiC power MOSFETs

H. Chen*, P. M. Gammon, V. A. Shah, C. A. Fisher, C. Chan, S. Jahdi, D. P. Hamilton, M. R. Jennings, M. Myronov, D. R. Leadley, P. A. Mawby

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

6 Citations (Scopus)

Abstract

The cryogenic performance of two commercially available SiC power MOSFETs are presented in this work. The devices are characterised in static and dynamic tests at 10 K intervals from 20-320 K. Static current-voltage characterisation indicates that at low temperatures threshold voltage, turn-on voltage, on-state resistance, transconductance, and the body diode turn-on voltage all increase while saturation current decreases. Dynamic, 60 V, 3A switching tests within the cryogenic chamber are also reported and the trends of switching speed, losses, and total power losses, which rise at low temperature, are presented. Overall, both MOSFETs are fully operable down to 20 K with both positive and negative changes in behaviour.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2014
PublisherTrans Tech Publications Inc
Pages777-780
Number of pages4
ISBN (Print)9783038354789
DOIs
Publication statusPublished - 1 Jan 2015
EventEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France
Duration: 21 Sep 201425 Sep 2014

Publication series

NameMaterials Science Forum
Volume821-823
ISSN (Print)0255-5476

Conference

ConferenceEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014
CountryFrance
CityGrenoble
Period21/09/1425/09/14

Keywords

  • Cryogenic
  • MOSFET
  • Silicon carbide
  • Static
  • Switching

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