Cryogenic characterization of commercial SiC power MOSFETs

H. Chen*, P. M. Gammon, V. A. Shah, C. A. Fisher, C. Chan, S. Jahdi, D. P. Hamilton, M. R. Jennings, M. Myronov, D. R. Leadley, P. A. Mawby

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

15 Citations (Scopus)


The cryogenic performance of two commercially available SiC power MOSFETs are presented in this work. The devices are characterised in static and dynamic tests at 10 K intervals from 20-320 K. Static current-voltage characterisation indicates that at low temperatures threshold voltage, turn-on voltage, on-state resistance, transconductance, and the body diode turn-on voltage all increase while saturation current decreases. Dynamic, 60 V, 3A switching tests within the cryogenic chamber are also reported and the trends of switching speed, losses, and total power losses, which rise at low temperature, are presented. Overall, both MOSFETs are fully operable down to 20 K with both positive and negative changes in behaviour.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2014
PublisherTrans Tech Publications Inc
Number of pages4
ISBN (Print)9783038354789
Publication statusPublished - 1 Jan 2015
EventEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France
Duration: 21 Sept 201425 Sept 2014

Publication series

NameMaterials Science Forum
ISSN (Print)0255-5476


ConferenceEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014


  • Cryogenic
  • Silicon carbide
  • Static
  • Switching


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