@inproceedings{396a9869187842a7b2a01bc9ef7a792d,
title = "Cryogenic characterization of commercial SiC power MOSFETs",
abstract = "The cryogenic performance of two commercially available SiC power MOSFETs are presented in this work. The devices are characterised in static and dynamic tests at 10 K intervals from 20-320 K. Static current-voltage characterisation indicates that at low temperatures threshold voltage, turn-on voltage, on-state resistance, transconductance, and the body diode turn-on voltage all increase while saturation current decreases. Dynamic, 60 V, 3A switching tests within the cryogenic chamber are also reported and the trends of switching speed, losses, and total power losses, which rise at low temperature, are presented. Overall, both MOSFETs are fully operable down to 20 K with both positive and negative changes in behaviour.",
keywords = "Cryogenic, MOSFET, Silicon carbide, Static, Switching",
author = "H. Chen and Gammon, \{P. M.\} and Shah, \{V. A.\} and Fisher, \{C. A.\} and C. Chan and S. Jahdi and Hamilton, \{D. P.\} and Jennings, \{M. R.\} and M. Myronov and Leadley, \{D. R.\} and Mawby, \{P. A.\}",
year = "2015",
month = jan,
day = "1",
doi = "10.4028/www.scientific.net/MSF.821-823.777",
language = "English",
isbn = "9783038354789",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Inc",
pages = "777--780",
booktitle = "Silicon Carbide and Related Materials 2014",
address = "Switzerland",
note = "European Conference on Silicon Carbide and Related Materials, ECSCRM 2014 ; Conference date: 21-09-2014 Through 25-09-2014",
}