Crystal growth of B12As2 on SiC substrate by CVD method

R Nagarajan, Z Xu, JH Edgar, F Baig, J Chaudhuri, Z Rek, EA Payzant, HM Meyer, JW Pomeroy, M Kuball

Research output: Contribution to journalArticle (Academic Journal)peer-review

20 Citations (Scopus)


The growth of B12As2 by chemical vapor deposition on 6H-SiC substrates using hydrides B2H6 and AsH3 as the reactants is described. The growth rate increased from 1.5 mum/h at 1100degreesC to a maximum of 5mum/h at 1400degreesC, and decreased at higher temperatures. X-ray diffraction indicates that the deposits were amorphous when the deposition temperature was below 1150degreesC. Strongly c-axis oriented crystalline B12As2, films were obtained at temperatures higher than 1150degreesC. The orientation relationship of the B12As2 on 6H-SiC was (0001)parallel to(0001). The surface morphology of the B12As2, film grown at 1150degreesC consisted of isolated triangular crystallites. A continuous film forms as the arowth temperature is progressively increased up to 1450degreesC.
Translated title of the contributionCrystal growth of B12As2 on SiC substrate by CVD method
Original languageEnglish
Pages (from-to)431 - 438
Number of pages8
JournalJournal of Crystal Growth
Volume273 (3-4)
Publication statusPublished - 2005

Bibliographical note

Publisher: Elsevier Science BV

Structured keywords

  • CDTR

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