DC and AC electroluminescence in silicon nanoparticles embedded in silicon-rich oxide films

A. Morales-Sánchez*, J. Barreto, C. Domínguez, M. Aceves-Mijares, M. Perálvarez, B. Garrido, J. A. Luna-López

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

18 Citations (Scopus)

Abstract

Electroluminescent properties of silicon-rich oxide(SRO) films were studied using metal oxide semiconductor-(MOS)-like devices. Thin SRO films with 4at.% of silicon excess were deposited by low pressure chemical vapour deposition followed by a thermal annealing at 1100 °C. Intense continuous visible and infrared luminescence has been observed when devices are reversely and forwardly bias, respectively. After an electrical stress, the continuous electroluminescence (EL) is quenched but devices show strong field-effect EL with pulsed polarization. A model based on conductive paths - across the SRO film - has been proposed to explain the EL behaviour in these devices.

Original languageEnglish
Article number085710
JournalNanotechnology
Volume21
Issue number8
DOIs
Publication statusPublished - 2010

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