DC and AC electroluminescence in silicon nanoparticles embedded in silicon-rich oxide films

A. Morales-Sánchez; J. Barreto; C. Domínguez; M. Aceves-Mijares; M. Perálvarez; B. Garrido; J. A. Luna-López

doi:10.1088/0957-4484/21/8/085710

DC and AC electroluminescence in silicon nanoparticles embedded in silicon-rich oxide films

A. Morales-Sánchez^*, J. Barreto, C. Domínguez, M. Aceves-Mijares, M. Perálvarez, B. Garrido, J. A. Luna-López

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

23 Citations (Scopus)

Abstract

Electroluminescent properties of silicon-rich oxide(SRO) films were studied using metal oxide semiconductor-(MOS)-like devices. Thin SRO films with 4at.% of silicon excess were deposited by low pressure chemical vapour deposition followed by a thermal annealing at 1100 °C. Intense continuous visible and infrared luminescence has been observed when devices are reversely and forwardly bias, respectively. After an electrical stress, the continuous electroluminescence (EL) is quenched but devices show strong field-effect EL with pulsed polarization. A model based on conductive paths - across the SRO film - has been proposed to explain the EL behaviour in these devices.

Original language	English
Article number	085710
Journal	Nanotechnology
Volume	21
Issue number	8
DOIs	https://doi.org/10.1088/0957-4484/21/8/085710
Publication status	Published - 2010

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Photonics and Quantum

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title = "DC and AC electroluminescence in silicon nanoparticles embedded in silicon-rich oxide films",

abstract = "Electroluminescent properties of silicon-rich oxide(SRO) films were studied using metal oxide semiconductor-(MOS)-like devices. Thin SRO films with 4at.% of silicon excess were deposited by low pressure chemical vapour deposition followed by a thermal annealing at 1100 °C. Intense continuous visible and infrared luminescence has been observed when devices are reversely and forwardly bias, respectively. After an electrical stress, the continuous electroluminescence (EL) is quenched but devices show strong field-effect EL with pulsed polarization. A model based on conductive paths - across the SRO film - has been proposed to explain the EL behaviour in these devices.",

author = "A. Morales-S{\'a}nchez and J. Barreto and C. Dom{\'i}nguez and M. Aceves-Mijares and M. Per{\'a}lvarez and B. Garrido and Luna-L{\'o}pez, {J. A.}",

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doi = "10.1088/0957-4484/21/8/085710",

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T1 - DC and AC electroluminescence in silicon nanoparticles embedded in silicon-rich oxide films

AU - Morales-Sánchez, A.

AU - Barreto, J.

AU - Domínguez, C.

AU - Aceves-Mijares, M.

AU - Perálvarez, M.

AU - Garrido, B.

AU - Luna-López, J. A.

PY - 2010

Y1 - 2010

N2 - Electroluminescent properties of silicon-rich oxide(SRO) films were studied using metal oxide semiconductor-(MOS)-like devices. Thin SRO films with 4at.% of silicon excess were deposited by low pressure chemical vapour deposition followed by a thermal annealing at 1100 °C. Intense continuous visible and infrared luminescence has been observed when devices are reversely and forwardly bias, respectively. After an electrical stress, the continuous electroluminescence (EL) is quenched but devices show strong field-effect EL with pulsed polarization. A model based on conductive paths - across the SRO film - has been proposed to explain the EL behaviour in these devices.

AB - Electroluminescent properties of silicon-rich oxide(SRO) films were studied using metal oxide semiconductor-(MOS)-like devices. Thin SRO films with 4at.% of silicon excess were deposited by low pressure chemical vapour deposition followed by a thermal annealing at 1100 °C. Intense continuous visible and infrared luminescence has been observed when devices are reversely and forwardly bias, respectively. After an electrical stress, the continuous electroluminescence (EL) is quenched but devices show strong field-effect EL with pulsed polarization. A model based on conductive paths - across the SRO film - has been proposed to explain the EL behaviour in these devices.

UR - http://www.scopus.com/inward/record.url?scp=76249088042&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/21/8/085710

DO - 10.1088/0957-4484/21/8/085710

M3 - Article (Academic Journal)

C2 - 20101075

AN - SCOPUS:76249088042

SN - 0957-4484

VL - 21

JO - Nanotechnology

JF - Nanotechnology

IS - 8

M1 - 085710

ER -

DC and AC electroluminescence in silicon nanoparticles embedded in silicon-rich oxide films

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