TY - JOUR
T1 - DC electroluminescence efficiency of silicon rich silicon oxide light emitting capacitors
AU - Juvert, Joan
AU - Gonzalez Fernandez, Alfredo Abelardo
AU - Morales-Sánchez, Alfredo
AU - Barreto, Jorge
AU - Aceves, Mariano
AU - Llobera, Andreu
AU - Dominguez, Carlos
PY - 2013
Y1 - 2013
N2 - We analyze the influence of the fabrication technique and the silicon excess on the power efficiency and evolution with time of the electroluminescence of silicon rich silicon oxide in metal-oxide-semiconductor like light emitting capacitors under direct current. The silicon rich silicon oxide layers have been fabricated using two different techniques, namely plasma enhanced chemical vapor deposition and silicon ion implantation. Six different silicon excesses have been studied, ranging from 6 at. % to 15 at. %. It is shown that both the power efficiency and external quantum efficiency increase with the silicon excess due to a decrease in the electroluminescence current threshold. The maximum value of the power efficiency has been found to be (2.6 ± 0.3) × 10-5 in the ion implanted sample with 15 at. % silicon excess. Significant differences in the evolution of the electroluminescence with time are found depending on the fabrication technique.
AB - We analyze the influence of the fabrication technique and the silicon excess on the power efficiency and evolution with time of the electroluminescence of silicon rich silicon oxide in metal-oxide-semiconductor like light emitting capacitors under direct current. The silicon rich silicon oxide layers have been fabricated using two different techniques, namely plasma enhanced chemical vapor deposition and silicon ion implantation. Six different silicon excesses have been studied, ranging from 6 at. % to 15 at. %. It is shown that both the power efficiency and external quantum efficiency increase with the silicon excess due to a decrease in the electroluminescence current threshold. The maximum value of the power efficiency has been found to be (2.6 ± 0.3) × 10-5 in the ion implanted sample with 15 at. % silicon excess. Significant differences in the evolution of the electroluminescence with time are found depending on the fabrication technique.
KW - Electroluminescence
KW - electroluminescent devices
KW - MIS devices
KW - nanoparticles
KW - nanostructured materials
KW - semiconductor devices
KW - silicon devices
UR - http://www.scopus.com/inward/record.url?scp=84883087109&partnerID=8YFLogxK
U2 - 10.1109/JLT.2013.2276435
DO - 10.1109/JLT.2013.2276435
M3 - Article (Academic Journal)
AN - SCOPUS:84883087109
VL - 31
SP - 2913
EP - 2918
JO - Journal of Lightwave Technology
JF - Journal of Lightwave Technology
SN - 0733-8724
IS - 17
M1 - 6574204
ER -