DC electroluminescence efficiency of silicon rich silicon oxide light emitting capacitors

Joan Juvert, Alfredo Abelardo Gonzalez Fernandez, Alfredo Morales-Sánchez, Jorge Barreto, Mariano Aceves, Andreu Llobera, Carlos Dominguez

Research output: Contribution to journalArticle (Academic Journal)peer-review

9 Citations (Scopus)


We analyze the influence of the fabrication technique and the silicon excess on the power efficiency and evolution with time of the electroluminescence of silicon rich silicon oxide in metal-oxide-semiconductor like light emitting capacitors under direct current. The silicon rich silicon oxide layers have been fabricated using two different techniques, namely plasma enhanced chemical vapor deposition and silicon ion implantation. Six different silicon excesses have been studied, ranging from 6 at. % to 15 at. %. It is shown that both the power efficiency and external quantum efficiency increase with the silicon excess due to a decrease in the electroluminescence current threshold. The maximum value of the power efficiency has been found to be (2.6 ± 0.3) × 10-5 in the ion implanted sample with 15 at. % silicon excess. Significant differences in the evolution of the electroluminescence with time are found depending on the fabrication technique.

Original languageEnglish
Article number6574204
Pages (from-to)2913-2918
Number of pages6
JournalJournal of Lightwave Technology
Issue number17
Publication statusPublished - 2013


  • Electroluminescence
  • electroluminescent devices
  • MIS devices
  • nanoparticles
  • nanostructured materials
  • semiconductor devices
  • silicon devices


Dive into the research topics of 'DC electroluminescence efficiency of silicon rich silicon oxide light emitting capacitors'. Together they form a unique fingerprint.

Cite this