Deeply etched MMI-based components on 4 μm thick SOI for SOAbased optical RAM cell circuits

Matteo Cherchi, Sami Ylinen, Mikko Harjanne, Markku Kapulainen, Timo Aalto, George T. Kanellos, Dimitrios Fitsios, Nikos Pleros

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

7 Citations (Scopus)

Abstract

We present novel deeply etched functional components, fabricated by multi-step patterning in the frame of our 4 μm thick Silicon on Insulator (SOI) platform based on singlemode rib-waveguides and on the previously developed rib-tostrip converter. These novel components include Multi-Mode Interference (MMI) splitters with any desired splitting ratio, wavelength sensitive 50/50 splitters with pre-filtering capability, multi-stage Mach-Zehnder Interferometer (MZI) filters for suppression of Amplified Spontaneous Emission (ASE), and MMI resonator filters. These novel building blocks enable functionalities otherwise not achievable on our SOI platform, and make it possible to integrate optical RAM cell layouts, by resorting to our technology for hybrid integration of Semiconductor Optical Amplifiers (SOAs). Typical SOA-based RAM cell layouts require generic splitting ratios, which are not readily achievable by a single MMI splitter. We present here a novel solution to this problem, which is very compact and versatile and suits perfectly our technology. Another useful functional element when using SOAs is the pass-band filter to suppress ASE. We pursued two complimentary approaches: a suitable interleaved cascaded MZI filter, based on a novel suitably designed MMI coupler with pre-filtering capabilities, and a completely novel MMI resonator concept, to achieve larger free spectral ranges and narrower pass-band response. Simulation and design principles are presented and compared to preliminary experimental functional results, together with scaling rules and predictions of achievable RAM cell densities. When combined with our newly developed ultra-small light-turning concept, these new components are expected to pave the way for high integration density of RAM cells.

Original languageEnglish
Title of host publicationSilicon Photonics VIII
Volume8629
DOIs
Publication statusPublished - 3 Jun 2013
EventSilicon Photonics VIII - San Francisco, CA, United States
Duration: 4 Feb 20136 Feb 2013

Conference

ConferenceSilicon Photonics VIII
CountryUnited States
CitySan Francisco, CA
Period4/02/136/02/13

Keywords

  • High density integration
  • Integrated silicon photonics
  • MMI couplers
  • MZI filters
  • Optical RAM cells
  • Optical resonators

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