Defect-control of conventional and anomalous electron transport at complex oxide interfaces

Felix Gunkel, Chris Bell, Hisashi Inoue, Yasuyuki Hikita, Satoshi Harashima, H. K. Sato, Bongju Kim, A. G. Swartz, tyler merz, Makoto Minohara, Susanne Hoffmann-Eifert, Harold Y. Hwang, Regina Dittmann

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Abstract

Using low temperature electrical measurements, the interrelation between electron transport, magnetic properties, and ionic defect structure in complex oxide interface systems is investigated, focusing on NdGaO3/SrTiO3 (100) interfaces. Field-dependent Hall characteristics (2 K − 300 K) are obtained for samples grown at various growth pressures. In addition to multiple electron transport, interfacial magnetism is tracked exploiting the anomalous Hall effect (AHE). These two properties both contribute to a non-linearity in the field dependence of the Hall resistance, with multiple carrier conduction evident below 30 K and AHE at temperatures ≤ 10 K. Considering these two sources of non-linearity, we suggest a phenomenological model capturing the complex field dependence of the Hall characteristics in the low-temperature regime. Our model allows the extraction of the conventional transport parameters and a qualitative analysis of the magnetization. The electron mobility is found to decrease systematically with increasing growth pressure. This suggests dominant electron scattering by acceptor-type strontium vacancies incorporated during growth. The AHE scales with growth pressure. The most pronounced AHE is found at increased growth pressure and thus in the most defective, low-mobility samples, indicating a correlation between transport, magnetism, and cation defect concentration.
Original languageEnglish
Article number031035
Number of pages15
JournalPhysical Review X
Volume6
Early online date30 Aug 2016
DOIs
Publication statusPublished - 1 Sep 2016

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