Defect-controlled growth of GaN nanorods on (0001)sapphire by molecular beam epitaxy

D Cherns; L Meshi; I.J Griffiths; S Khongphetsak; S.V Novikov; N Farley; R.P Campion; CT Foxon

doi:10.1063/1.2987423

Defect-controlled growth of GaN nanorods on (0001)sapphire by molecular beam epitaxy

D Cherns, L Meshi, I.J Griffiths, S Khongphetsak, S.V Novikov, N Farley, R.P Campion, CT Foxon

Research output: Contribution to journal › Article (Academic Journal) › peer-review

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Translated title of the contribution	Defect-controlled growth of GaN nanorods on (0001)sapphire by molecular beam epitaxy
Original language	English
Article number	11191
Pages (from-to)	1 - 3
Number of pages	3
Journal	Applied Physics Letters
Volume	93
Issue number	11
DOIs	https://doi.org/10.1063/1.2987423
Publication status	Published - Sept 2008

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http://apl.aip.org/resource/1/applab/v93/i11/p111911_s1

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title = "Defect-controlled growth of GaN nanorods on (0001)sapphire by molecular beam epitaxy",

author = "D Cherns and L Meshi and I.J Griffiths and S Khongphetsak and S.V Novikov and N Farley and R.P Campion and CT Foxon",

year = "2008",

month = sep,

doi = "10.1063/1.2987423",

language = "English",

volume = "93",

pages = "1 -- 3",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics (AIP)",

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T1 - Defect-controlled growth of GaN nanorods on (0001)sapphire by molecular beam epitaxy

AU - Cherns, D

AU - Meshi, L

AU - Griffiths, I.J

AU - Khongphetsak, S

AU - Novikov, S.V

AU - Farley, N

AU - Campion, R.P

AU - Foxon, CT

PY - 2008/9

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U2 - 10.1063/1.2987423

DO - 10.1063/1.2987423

M3 - Article (Academic Journal)

SN - 0003-6951

VL - 93

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 11191

ER -

Defect-controlled growth of GaN nanorods on (0001)sapphire by molecular beam epitaxy

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