Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers

D Cherns, L Meshi, I.J Griffiths, S Khongphetsak, S.V Novikov, N Farley, R.P Campion, C.T Foxon

Research output: Contribution to journalArticle (Academic Journal)peer-review

63 Citations (Scopus)
Translated title of the contributionDefect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers
Original languageEnglish
Article number121902
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume92
Issue number12
DOIs
Publication statusPublished - Mar 2008

Bibliographical note

Publisher: American Institute of Physics

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