Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device

Y Gong; M Tapajna; SD Bakalova-Hadjikrasteva; Y Zhang; JH Edgar; Y Zhang; M Dudley; M Hopkins; M Kuball

doi:10.1063/1.3443712

Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device

Y Gong, M Tapajna, SD Bakalova-Hadjikrasteva, Y Zhang, JH Edgar, Y Zhang, M Dudley, M Hopkins, M Kuball

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

16 Citations (Scopus)

Abstract

B(12)As(2)/SiC pn heterojunction diodes based on the radiation-hard B(12)As(2) deposited on (0001) n-type 4H-SiC via chemical vapor deposition were demonstrated. The diodes exhibit good rectifying behavior with an ideality factor of 1.8 and a leakage current as low as 9.4 x 10(-6) A/cm(2). Capacitance-voltage measurements using a two-frequency technique showed a hole concentration of similar to 1.8-2.0 x 10(17) cm(-3) in B(12)As(2) with a slight increase near the interface due to the presence of an interfacial layer to accommodate lattice mismatch. Band offsets between the B(12)As(2) and SiC were estimated to be similar to 1.06 eV and 1.12 eV for conduction band and valance band, respectively. (C) 2010 American Institute of Physics.

Translated title of the contribution	Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device
Original language	English
Pages (from-to)	223506 - 223506
Number of pages	3
Journal	Applied Physics Letters
Volume	96
DOIs	https://doi.org/10.1063/1.3443712
Publication status	Published - May 2010

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NSF: AN INVESTIGATION INTO THE PROPERTIES OF B12A'S,B4C
Kuball, M. H. H. (Principal Investigator)
1/04/07 → 1/04/10
Project: Research

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@article{e16403e34aa843b5a9b0dc66d7a18082,

title = "Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device",

abstract = "B(12)As(2)/SiC pn heterojunction diodes based on the radiation-hard B(12)As(2) deposited on (0001) n-type 4H-SiC via chemical vapor deposition were demonstrated. The diodes exhibit good rectifying behavior with an ideality factor of 1.8 and a leakage current as low as 9.4 x 10(-6) A/cm(2). Capacitance-voltage measurements using a two-frequency technique showed a hole concentration of similar to 1.8-2.0 x 10(17) cm(-3) in B(12)As(2) with a slight increase near the interface due to the presence of an interfacial layer to accommodate lattice mismatch. Band offsets between the B(12)As(2) and SiC were estimated to be similar to 1.06 eV and 1.12 eV for conduction band and valance band, respectively. (C) 2010 American Institute of Physics.",

author = "Y Gong and M Tapajna and SD Bakalova-Hadjikrasteva and Y Zhang and JH Edgar and Y Zhang and M Dudley and M Hopkins and M Kuball",

year = "2010",

month = may,

doi = "10.1063/1.3443712",

language = "English",

volume = "96",

pages = "223506 -- 223506",

journal = "Applied Physics Letters",

issn = "1077-3118",

publisher = "American Institute of Physics (AIP)",

}

TY - JOUR

T1 - Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device

AU - Gong, Y

AU - Tapajna, M

AU - Bakalova-Hadjikrasteva, SD

AU - Zhang, Y

AU - Edgar, JH

AU - Zhang, Y

AU - Dudley, M

AU - Hopkins, M

AU - Kuball, M

PY - 2010/5

Y1 - 2010/5

N2 - B(12)As(2)/SiC pn heterojunction diodes based on the radiation-hard B(12)As(2) deposited on (0001) n-type 4H-SiC via chemical vapor deposition were demonstrated. The diodes exhibit good rectifying behavior with an ideality factor of 1.8 and a leakage current as low as 9.4 x 10(-6) A/cm(2). Capacitance-voltage measurements using a two-frequency technique showed a hole concentration of similar to 1.8-2.0 x 10(17) cm(-3) in B(12)As(2) with a slight increase near the interface due to the presence of an interfacial layer to accommodate lattice mismatch. Band offsets between the B(12)As(2) and SiC were estimated to be similar to 1.06 eV and 1.12 eV for conduction band and valance band, respectively. (C) 2010 American Institute of Physics.

AB - B(12)As(2)/SiC pn heterojunction diodes based on the radiation-hard B(12)As(2) deposited on (0001) n-type 4H-SiC via chemical vapor deposition were demonstrated. The diodes exhibit good rectifying behavior with an ideality factor of 1.8 and a leakage current as low as 9.4 x 10(-6) A/cm(2). Capacitance-voltage measurements using a two-frequency technique showed a hole concentration of similar to 1.8-2.0 x 10(17) cm(-3) in B(12)As(2) with a slight increase near the interface due to the presence of an interfacial layer to accommodate lattice mismatch. Band offsets between the B(12)As(2) and SiC were estimated to be similar to 1.06 eV and 1.12 eV for conduction band and valance band, respectively. (C) 2010 American Institute of Physics.

U2 - 10.1063/1.3443712

DO - 10.1063/1.3443712

M3 - Article (Academic Journal)

SN - 1077-3118

VL - 96

SP - 223506

EP - 223506

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device

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NSF: AN INVESTIGATION INTO THE PROPERTIES OF B12A'S,B4C

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