Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device

B(12)As(2)/SiC pn heterojunction diodes based on the radiation-hard B(12)As(2) deposited on (0001) n-type 4H-SiC via chemical vapor deposition were demonstrated. The diodes exhibit good rectifying behavior with an ideality factor of 1.8 and a leakage current as low as 9.4 x 10(-6) A/cm(2). Capacitance-voltage measurements using a two-frequency technique showed a hole concentration of similar to 1.8-2.0 x 10(17) cm(-3) in B(12)As(2) with a slight increase near the interface due to the presence of an interfacial layer to accommodate lattice mismatch. Band offsets between the B(12)As(2) and SiC were estimated to be similar to 1.06 eV and 1.12 eV for conduction band and valance band, respectively. (C) 2010 American Institute of Physics.