TY - JOUR
T1 - Design and analysis of single-event tolerant slave latches for enhanced scan delay testing
AU - Lu, Yang
AU - Lombardi, Fabrizio
AU - Pontarelli, Salvatore
AU - Ottavi, Marco
PY - 2014/1/1
Y1 - 2014/1/1
N2 - The last few years have seen the development and fabrication of nanoscale circuits at high density and low power. Following a single-event upset (SEU), so-called soft errors due to internal and externally induced phenomena (such as $\alpha$-particles and cosmic rays in adverse environments) have been reported during system operation; this is especially deleterious for storage elements such as flip-flops. To reduce the impact of a soft error on flip-flops, hardening techniques have been utilized. This paper proposes two new slave latches for improving the SEU tolerance of a flip-flop in scan delay testing. The two proposed slave latches utilize additional circuitry to increase the critical charge of the flip-flop compared to designs found in the technical literature. When used in a flip-flop, the first (second) latch design achieves a 5.6 (2.4) times larger critical charge with 11% (4%) delay and 16% (9%) power consumption overhead at 32-nm feature size, as compared with the best design found in the technical literature. Moreover, it is shown that the proposed slave latches have also superior performance in the presence of a single event with a multiple-node upset.
AB - The last few years have seen the development and fabrication of nanoscale circuits at high density and low power. Following a single-event upset (SEU), so-called soft errors due to internal and externally induced phenomena (such as $\alpha$-particles and cosmic rays in adverse environments) have been reported during system operation; this is especially deleterious for storage elements such as flip-flops. To reduce the impact of a soft error on flip-flops, hardening techniques have been utilized. This paper proposes two new slave latches for improving the SEU tolerance of a flip-flop in scan delay testing. The two proposed slave latches utilize additional circuitry to increase the critical charge of the flip-flop compared to designs found in the technical literature. When used in a flip-flop, the first (second) latch design achieves a 5.6 (2.4) times larger critical charge with 11% (4%) delay and 16% (9%) power consumption overhead at 32-nm feature size, as compared with the best design found in the technical literature. Moreover, it is shown that the proposed slave latches have also superior performance in the presence of a single event with a multiple-node upset.
KW - flip-flop
KW - Radiation hardening
KW - Single-event upset (SEU)
KW - soft error
UR - http://www.scopus.com/inward/record.url?scp=84896442239&partnerID=8YFLogxK
U2 - 10.1109/TDMR.2013.2266543
DO - 10.1109/TDMR.2013.2266543
M3 - Article (Academic Journal)
AN - SCOPUS:84896442239
SN - 1530-4388
VL - 14
SP - 333
EP - 343
JO - IEEE Transactions on Device and Materials Reliability
JF - IEEE Transactions on Device and Materials Reliability
IS - 1
M1 - 6527954
ER -