Design and fabrication techniques for a mid-infrared photonic crystal defect cavity in indium antimonide

JR Pugh; Y-LD Ho; PJ Heard; GR Nash; T Ashley; JG Rarity; MJ Cryan

doi:10.1109/ICTON.2010.5549039

Design and fabrication techniques for a mid-infrared photonic crystal defect cavity in indium antimonide

JR Pugh, Y-LD Ho, PJ Heard, GR Nash, T Ashley, JG Rarity, MJ Cryan

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

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Abstract

Simulation results and fabrication details are presented for a two-dimensional AlxGayIn1-x-ySb photonic crystal membrane defect cavity. Peak emission is predicted at λ = 3.372 with a Q factor of 26233 for an optimized membrane thickness of 1000 nm.

Translated title of the contribution	Design and fabrication techniques for a mid-infrared photonic crystal defect cavity in indium antimonide
Original language	English
Title of host publication	12th International Conference on Transparent Optical Networks (ICTON), 2010, Munich
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1 - 4
Number of pages	4
ISBN (Print)	9781424477999
DOIs	https://doi.org/10.1109/ICTON.2010.5549039
Publication status	Published - Jun 2010
Event	12th International Conference on Transparent Optical Networks - Munich, Germany Duration: 1 Jun 2010 → …

Conference

Conference	12th International Conference on Transparent Optical Networks
Country	Germany
City	Munich
Period	1/06/10 → …

Bibliographical note

Rose publication type: Conference contribution

Terms of use: Copyright © 2010 IEEE. Reprinted from 12th International Conference on Transparent Optical Networks (ICTON), 2010.

This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of the University of Bristol's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org.

By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

Keywords

photonic crystal
mid infra-red
focused ion beam
finite-difference time-domain (FDTD)

Access to Document

10.1109/ICTON.2010.5549039

Cryan IEEE ICTON 2010Accepted author manuscript, 267 KB

http://hdl.handle.net/1983/1669

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Pugh, JR., Ho, Y-LD., Heard, PJ., Nash, GR., Ashley, T., Rarity, JG., & Cryan, MJ. (2010). Design and fabrication techniques for a mid-infrared photonic crystal defect cavity in indium antimonide. In 12th International Conference on Transparent Optical Networks (ICTON), 2010, Munich (pp. 1 - 4). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ICTON.2010.5549039

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Pugh, JR , Ho, Y-LD , Heard, PJ, Nash, GR, Ashley, T, Rarity, JG & Cryan, MJ 2010, Design and fabrication techniques for a mid-infrared photonic crystal defect cavity in indium antimonide. in 12th International Conference on Transparent Optical Networks (ICTON), 2010, Munich. Institute of Electrical and Electronics Engineers (IEEE), pp. 1 - 4, 12th International Conference on Transparent Optical Networks, Munich, Germany, 1/06/10. https://doi.org/10.1109/ICTON.2010.5549039

Design and fabrication techniques for a mid-infrared photonic crystal defect cavity in indium antimonide. / Pugh, JR ; Ho, Y-LD ; Heard, PJ; Nash, GR; Ashley, T; Rarity, JG ; Cryan, MJ.

12th International Conference on Transparent Optical Networks (ICTON), 2010, Munich. Institute of Electrical and Electronics Engineers (IEEE), 2010. p. 1 - 4.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

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Pugh JR , Ho Y-LD , Heard PJ, Nash GR, Ashley T, Rarity JG et al. Design and fabrication techniques for a mid-infrared photonic crystal defect cavity in indium antimonide. In 12th International Conference on Transparent Optical Networks (ICTON), 2010, Munich. Institute of Electrical and Electronics Engineers (IEEE). 2010. p. 1 - 4 https://doi.org/10.1109/ICTON.2010.5549039