A new method is used to design a power semiconductor device which combines IGBT switching and thyristor on-state characteristics. A single gate signal controls the switching and triggers the transitions between the IGBT and thyristor modes of operation. The design of single-gated devices with multiple modes and aspects of their switching behaviour are discussed.
|Translated title of the contribution||Design of single-gated multiple-mode power semiconductor devices|
|Pages (from-to)||64 - 70|
|Number of pages||7|
|Journal||IEE Proceedings - Circuits, Devices and Systems|
|Publication status||Published - Apr 2001|