Design of single-gated multiple-mode power semiconductor devices

BH Stark, PR Palmer

Research output: Contribution to journalArticle (Academic Journal)peer-review

2 Citations (Scopus)

Abstract

A new method is used to design a power semiconductor device which combines IGBT switching and thyristor on-state characteristics. A single gate signal controls the switching and triggers the transitions between the IGBT and thyristor modes of operation. The design of single-gated devices with multiple modes and aspects of their switching behaviour are discussed.
Translated title of the contributionDesign of single-gated multiple-mode power semiconductor devices
Original languageEnglish
Pages (from-to)64 - 70
Number of pages7
JournalIEE Proceedings - Circuits, Devices and Systems
Volume148 (2)
DOIs
Publication statusPublished - Apr 2001

Bibliographical note

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

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