Abstract
A new method is used to design a power semiconductor device which combines IGBT switching and thyristor on-state characteristics. A single gate signal controls the switching and triggers the transitions between the IGBT and thyristor modes of operation. The design of single-gated devices with multiple modes and aspects of their switching behaviour are discussed.
| Translated title of the contribution | Design of single-gated multiple-mode power semiconductor devices |
|---|---|
| Original language | English |
| Pages (from-to) | 64 - 70 |
| Number of pages | 7 |
| Journal | IEE Proceedings - Circuits, Devices and Systems |
| Volume | 148 (2) |
| DOIs | |
| Publication status | Published - Apr 2001 |
Bibliographical note
Publisher: Institute of Electrical and Electronics Engineers (IEEE)Fingerprint
Dive into the research topics of 'Design of single-gated multiple-mode power semiconductor devices'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver