Detailed investigation of ion irradiation effects on GaInNAs/GaAs quantum well material

YN Qiu; G Papaioannou; JM Pozo; JM Rorison; M Saarinen; J Konttinen; J Viheriala; P Leinonen; T Jouhti; M Pessa

Detailed investigation of ion irradiation effects on GaInNAs/GaAs quantum well material

YN Qiu, G Papaioannou, JM Pozo, JM Rorison, M Saarinen, J Konttinen, J Viheriala, P Leinonen, T Jouhti, M Pessa

Department of Electrical & Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

Translated title of the contribution	Detailed investigation of ion irradiation effects on GaInNAs/GaAs quantum well material
Original language	English
Title of host publication	UK Compound Semiconductor meeting, Sheffield, UK
Publication status	Published - 2006

Research Groups and Themes

Photonics and Quantum

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@inproceedings{786d2b4b6ee94b1683163e822ffe925b,

title = "Detailed investigation of ion irradiation effects on GaInNAs/GaAs quantum well material",

author = "YN Qiu and G Papaioannou and JM Pozo and JM Rorison and M Saarinen and J Konttinen and J Viheriala and P Leinonen and T Jouhti and M Pessa",

year = "2006",

language = "English",

booktitle = "UK Compound Semiconductor meeting, Sheffield, UK",

}

TY - GEN

T1 - Detailed investigation of ion irradiation effects on GaInNAs/GaAs quantum well material

AU - Qiu, YN

AU - Papaioannou, G

AU - Pozo, JM

AU - Rorison, JM

AU - Saarinen, M

AU - Konttinen, J

AU - Viheriala, J

AU - Leinonen, P

AU - Jouhti, T

AU - Pessa, M

PY - 2006

Y1 - 2006

M3 - Conference Contribution (Conference Proceeding)

BT - UK Compound Semiconductor meeting, Sheffield, UK

ER -