Detection of Berry's Phase in a Bulk Rashba Semiconductor

H. Murakawa*, M. S. Bahramy, M. Tokunaga, Y. Kohama, C. Bell, Y. Kaneko, N. Nagaosa, H. Y. Hwang, Y. Tokura, Chris Bell

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

185 Citations (Scopus)

Abstract

The motion of electrons in a solid has a profound effect on its topological properties and may result in a nonzero Berry's phase, a geometric quantum phase encoded in the system's electronic wave function. Despite its ubiquity, there are few experimental observations of Berry's phase of bulk states. Here, we report detection of a nontrivial pi Berry's phase in the bulk Rashba semiconductor BiTeI via analysis of the Shubnikov-de Haas (SdH) effect. The extremely large Rashba splitting in this material enables the separation of SdH oscillations, stemming from the spin-split inner and outer Fermi surfaces. For both Fermi surfaces, we observe a systematic pi-phase shift in SdH oscillations, consistent with the theoretically predicted nontrivial pi Berry's phase in Rashba systems.

Original languageEnglish
Pages (from-to)1490-1493
Number of pages4
JournalScience
Volume342
Issue number6165
DOIs
Publication statusPublished - 20 Dec 2013

Keywords

  • TOPOLOGICAL INSULATOR
  • CONDUCTANCE
  • TRANSPORT
  • GRAPHENE
  • SURFACE
  • BITEI

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