Determination of the dielectric constant of GaN in the kHz frequency range

M. J. Kane, MJ Uren, D. J. Wallis, P. J. Wright, D. E. J. Soley, A. J. Simons, T. Martin

Research output: Contribution to journalArticle (Academic Journal)peer-review

10 Citations (Scopus)

Abstract

Capacitance techniques are used to show that the dielectric constant epsilon(parallel to) of GaN in the kHz frequency range is 10.6 +/- 0.3. The data allow depth information to be accurately extracted using methods such as mercury probe capacitance profiling. The measurements complement the pre-existing data which are derived from infrared reflectivity and which give a value of 10.4 +/- 0.3.
Translated title of the contributionDetermination of the dielectric constant of GaN in the kHz frequency range
Original languageEnglish
Pages (from-to)085006
JournalSemiconductor Science and Technology
Volume26
DOIs
Publication statusPublished - Aug 2011

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