Determination of the dielectric constant of GaN in the kHz frequency range

M. J. Kane; MJ Uren; D. J. Wallis; P. J. Wright; D. E. J. Soley; A. J. Simons; T. Martin

doi:10.1088/0268-1242/26/8/085006

Determination of the dielectric constant of GaN in the kHz frequency range

M. J. Kane, MJ Uren, D. J. Wallis, P. J. Wright, D. E. J. Soley, A. J. Simons, T. Martin

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

22 Citations (Scopus)

Abstract

Capacitance techniques are used to show that the dielectric constant epsilon(parallel to) of GaN in the kHz frequency range is 10.6 +/- 0.3. The data allow depth information to be accurately extracted using methods such as mercury probe capacitance profiling. The measurements complement the pre-existing data which are derived from infrared reflectivity and which give a value of 10.4 +/- 0.3.

Translated title of the contribution	Determination of the dielectric constant of GaN in the kHz frequency range
Original language	English
Pages (from-to)	085006
Journal	Semiconductor Science and Technology
Volume	26
DOIs	https://doi.org/10.1088/0268-1242/26/8/085006
Publication status	Published - Aug 2011

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@article{96d28dc8dce0451ca65a4023a9fa50cb,

title = "Determination of the dielectric constant of GaN in the kHz frequency range",

abstract = "Capacitance techniques are used to show that the dielectric constant epsilon(parallel to) of GaN in the kHz frequency range is 10.6 +/- 0.3. The data allow depth information to be accurately extracted using methods such as mercury probe capacitance profiling. The measurements complement the pre-existing data which are derived from infrared reflectivity and which give a value of 10.4 +/- 0.3.",

author = "Kane, {M. J.} and MJ Uren and Wallis, {D. J.} and Wright, {P. J.} and Soley, {D. E. J.} and Simons, {A. J.} and T. Martin",

year = "2011",

month = aug,

doi = "10.1088/0268-1242/26/8/085006",

language = "English",

volume = "26",

pages = "085006",

journal = "Semiconductor Science and Technology",

issn = "1361-6641",

publisher = "IOP Publishing",

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TY - JOUR

T1 - Determination of the dielectric constant of GaN in the kHz frequency range

AU - Kane, M. J.

AU - Uren, MJ

AU - Wallis, D. J.

AU - Wright, P. J.

AU - Soley, D. E. J.

AU - Simons, A. J.

AU - Martin, T.

PY - 2011/8

Y1 - 2011/8

N2 - Capacitance techniques are used to show that the dielectric constant epsilon(parallel to) of GaN in the kHz frequency range is 10.6 +/- 0.3. The data allow depth information to be accurately extracted using methods such as mercury probe capacitance profiling. The measurements complement the pre-existing data which are derived from infrared reflectivity and which give a value of 10.4 +/- 0.3.

AB - Capacitance techniques are used to show that the dielectric constant epsilon(parallel to) of GaN in the kHz frequency range is 10.6 +/- 0.3. The data allow depth information to be accurately extracted using methods such as mercury probe capacitance profiling. The measurements complement the pre-existing data which are derived from infrared reflectivity and which give a value of 10.4 +/- 0.3.

U2 - 10.1088/0268-1242/26/8/085006

DO - 10.1088/0268-1242/26/8/085006

M3 - Article (Academic Journal)

SN - 1361-6641

VL - 26

SP - 085006

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

ER -

Determination of the dielectric constant of GaN in the kHz frequency range

Abstract

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