Determination of the dielectric constant of GaN in the kHz frequency range

M. J. Kane; MJ Uren; D. J. Wallis; P. J. Wright; D. E. J. Soley; A. J. Simons; T. Martin

doi:10.1088/0268-1242/26/8/085006

Determination of the dielectric constant of GaN in the kHz frequency range

M. J. Kane
, MJ Uren
, D. J. Wallis
, P. J. Wright
, D. E. J. Soley
, A. J. Simons
, T. Martin

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

26 Citations (Scopus)

Abstract

Capacitance techniques are used to show that the dielectric constant epsilon(parallel to) of GaN in the kHz frequency range is 10.6 +/- 0.3. The data allow depth information to be accurately extracted using methods such as mercury probe capacitance profiling. The measurements complement the pre-existing data which are derived from infrared reflectivity and which give a value of 10.4 +/- 0.3.

Translated title of the contribution	Determination of the dielectric constant of GaN in the kHz frequency range
Original language	English
Pages (from-to)	085006
Journal	Semiconductor Science and Technology
Volume	26
DOIs	https://doi.org/10.1088/0268-1242/26/8/085006
Publication status	Published - Aug 2011

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@article{96d28dc8dce0451ca65a4023a9fa50cb,

title = "Determination of the dielectric constant of GaN in the kHz frequency range",

abstract = "Capacitance techniques are used to show that the dielectric constant epsilon(parallel to) of GaN in the kHz frequency range is 10.6 +/- 0.3. The data allow depth information to be accurately extracted using methods such as mercury probe capacitance profiling. The measurements complement the pre-existing data which are derived from infrared reflectivity and which give a value of 10.4 +/- 0.3.",

author = "Kane, \{M. J.\} and MJ Uren and Wallis, \{D. J.\} and Wright, \{P. J.\} and Soley, \{D. E. J.\} and Simons, \{A. J.\} and T. Martin",

year = "2011",

month = aug,

doi = "10.1088/0268-1242/26/8/085006",

language = "English",

volume = "26",

pages = "085006",

journal = "Semiconductor Science and Technology",

issn = "1361-6641",

publisher = "IOP Publishing",

}

TY - JOUR

T1 - Determination of the dielectric constant of GaN in the kHz frequency range

AU - Kane, M. J.

AU - Uren, MJ

AU - Wallis, D. J.

AU - Wright, P. J.

AU - Soley, D. E. J.

AU - Simons, A. J.

AU - Martin, T.

PY - 2011/8

Y1 - 2011/8

N2 - Capacitance techniques are used to show that the dielectric constant epsilon(parallel to) of GaN in the kHz frequency range is 10.6 +/- 0.3. The data allow depth information to be accurately extracted using methods such as mercury probe capacitance profiling. The measurements complement the pre-existing data which are derived from infrared reflectivity and which give a value of 10.4 +/- 0.3.

AB - Capacitance techniques are used to show that the dielectric constant epsilon(parallel to) of GaN in the kHz frequency range is 10.6 +/- 0.3. The data allow depth information to be accurately extracted using methods such as mercury probe capacitance profiling. The measurements complement the pre-existing data which are derived from infrared reflectivity and which give a value of 10.4 +/- 0.3.

U2 - 10.1088/0268-1242/26/8/085006

DO - 10.1088/0268-1242/26/8/085006

M3 - Article (Academic Journal)

SN - 1361-6641

VL - 26

SP - 085006

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

ER -

Determination of the dielectric constant of GaN in the kHz frequency range

Abstract

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