Determination of the self-compensation ratio of carbon in AlGaN for HEMTs

Ben Rackauskas; Michael J. Uren; Steve Stoffels; Ming Zhao; Stefaan Decoutere; Martin Kuball

doi:10.1109/TED.2018.2813542

Determination of the self-compensation ratio of carbon in AlGaN for HEMTs

Ben Rackauskas^*, Michael J. Uren, Steve Stoffels, Ming Zhao, Stefaan Decoutere, Martin Kuball

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

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Abstract

Epitaxial AlGaN/GaN/AlGaN-on-Si high-electron mobility structures with and without carbon doping have been studied. By considering the donor density required to suppress a 2D hole gas in the undoped structure, we demonstrate that the $2 \times 10^{19}$ cm^-3 substitutional carbon incorporated during metal-organic chemical vapor deposition must be a source of donors as well as acceptors, with a donor to acceptor ratio of at least 0.4. This compensation ratio was determined based on the comparison of substrate bias experiments with TCAD simulations. This value, which was previously unknown, is a key parameter in GaN power switching high- electron- mobility transistors, since it determines the resistivity of the layer used to suppress leakage and increase breakdown voltage.

Original language	English
Pages (from-to)	1838-1842
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	5
Early online date	27 Mar 2018
DOIs	https://doi.org/10.1109/TED.2018.2813542
Publication status	Published - 1 May 2018

Research Groups and Themes

CDTR

Keywords

2D hole gas (2DHG)
AlGaN
Carbon
Compensation
GaN
Self-compensation

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10.1109/TED.2018.2813542

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title = "Determination of the self-compensation ratio of carbon in AlGaN for HEMTs",

abstract = "Epitaxial AlGaN/GaN/AlGaN-on-Si high-electron mobility structures with and without carbon doping have been studied. By considering the donor density required to suppress a 2D hole gas in the undoped structure, we demonstrate that the $2 \times 10^{19}$ cm-3 substitutional carbon incorporated during metal-organic chemical vapor deposition must be a source of donors as well as acceptors, with a donor to acceptor ratio of at least 0.4. This compensation ratio was determined based on the comparison of substrate bias experiments with TCAD simulations. This value, which was previously unknown, is a key parameter in GaN power switching high- electron- mobility transistors, since it determines the resistivity of the layer used to suppress leakage and increase breakdown voltage.",

keywords = "2D hole gas (2DHG), AlGaN, Carbon, Compensation, GaN, Self-compensation",

author = "Ben Rackauskas and Uren, {Michael J.} and Steve Stoffels and Ming Zhao and Stefaan Decoutere and Martin Kuball",

year = "2018",

month = may,

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doi = "10.1109/TED.2018.2813542",

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journal = "IEEE Transactions on Electron Devices",

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publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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TY - JOUR

T1 - Determination of the self-compensation ratio of carbon in AlGaN for HEMTs

AU - Rackauskas, Ben

AU - Uren, Michael J.

AU - Stoffels, Steve

AU - Zhao, Ming

AU - Decoutere, Stefaan

AU - Kuball, Martin

PY - 2018/5/1

Y1 - 2018/5/1

N2 - Epitaxial AlGaN/GaN/AlGaN-on-Si high-electron mobility structures with and without carbon doping have been studied. By considering the donor density required to suppress a 2D hole gas in the undoped structure, we demonstrate that the $2 \times 10^{19}$ cm-3 substitutional carbon incorporated during metal-organic chemical vapor deposition must be a source of donors as well as acceptors, with a donor to acceptor ratio of at least 0.4. This compensation ratio was determined based on the comparison of substrate bias experiments with TCAD simulations. This value, which was previously unknown, is a key parameter in GaN power switching high- electron- mobility transistors, since it determines the resistivity of the layer used to suppress leakage and increase breakdown voltage.

AB - Epitaxial AlGaN/GaN/AlGaN-on-Si high-electron mobility structures with and without carbon doping have been studied. By considering the donor density required to suppress a 2D hole gas in the undoped structure, we demonstrate that the $2 \times 10^{19}$ cm-3 substitutional carbon incorporated during metal-organic chemical vapor deposition must be a source of donors as well as acceptors, with a donor to acceptor ratio of at least 0.4. This compensation ratio was determined based on the comparison of substrate bias experiments with TCAD simulations. This value, which was previously unknown, is a key parameter in GaN power switching high- electron- mobility transistors, since it determines the resistivity of the layer used to suppress leakage and increase breakdown voltage.

KW - 2D hole gas (2DHG)

KW - AlGaN

KW - Carbon

KW - Compensation

KW - GaN

KW - Self-compensation

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U2 - 10.1109/TED.2018.2813542

DO - 10.1109/TED.2018.2813542

M3 - Article (Academic Journal)

AN - SCOPUS:85044848267

SN - 0018-9383

VL - 65

SP - 1838

EP - 1842

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 5

ER -

Determination of the self-compensation ratio of carbon in AlGaN for HEMTs

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Determination of the self-compensation ratio of carbon in AlGaN for HEMTs

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