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Abstract This article presents a new bulk radiation damage model for p -type silicon for use in Synopsys Sentaurus TCAD. The model is shown to provide agreement between experiment and simulation for the voltage dependence of the leakage current and the charge collection efficiency, for fluences up to 8 × 1 0 15 1 MeV n eq ∕ cm 2 .
|Journal||Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment|
|Early online date||5 Sep 2017|
|Publication status||Published - 1 Dec 2017|
- Silicon sensor
- Silicon pixel detector
- Radiation damage
- Device simulation
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- 2 Finished
Bristol Consolidated Grant 2015-9
1/10/15 → 31/03/21
LHCb upgrade bridging funds
1/01/14 → 1/04/14