Development of a silicon bulk radiation damage model for Sentaurus TCAD

Å. Folkestad; K. Akiba; M. van Beuzekom; E. Buchanan; P. Collins; E. Dall’Occo; A. Di Canto; T. Evans; V. Franco Lima; J. García Pardiñas; H. Schindler; M. Vicente; M. Vieites Diaz; M. Williams

doi:10.1016/j.nima.2017.08.042

Development of a silicon bulk radiation damage model for Sentaurus TCAD

Å. Folkestad, K. Akiba, M. van Beuzekom, E. Buchanan, P. Collins, E. Dall’Occo, A. Di Canto, T. Evans, V. Franco Lima, J. García Pardiñas, H. Schindler, M. Vicente, M. Vieites Diaz, M. Williams

Research output: Contribution to journal › Article (Academic Journal) › peer-review

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Abstract

Abstract This article presents a new bulk radiation damage model for p -type silicon for use in Synopsys Sentaurus TCAD. The model is shown to provide agreement between experiment and simulation for the voltage dependence of the leakage current and the charge collection efficiency, for fluences up to 8 × 1 0 15 1 MeV n eq ∕ cm 2 .

Original language	English
Pages (from-to)	94-102
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	874
Early online date	5 Sep 2017
DOIs	https://doi.org/10.1016/j.nima.2017.08.042
Publication status	Published - 1 Dec 2017

Keywords

Silicon sensor
Silicon pixel detector
Radiation damage
TCAD
Device simulation

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Bristol Consolidated Grant 2015-9
Goldstein, J.
1/10/15 → 31/03/21
Project: Research
LHCb upgrade bridging funds
Rademacker, J. H.
1/01/14 → 1/04/14
Project: Research

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Folkestad, Å., Akiba, K., Beuzekom, M. V., Buchanan, E., Collins, P., Dall’Occo, E., Canto, A. D., Evans, T., Lima, V. F., Pardiñas, J. G., Schindler, H., Vicente, M., Diaz, M. V., & Williams, M. (2017). Development of a silicon bulk radiation damage model for Sentaurus TCAD. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 874, 94-102. https://doi.org/10.1016/j.nima.2017.08.042

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title = "Development of a silicon bulk radiation damage model for Sentaurus TCAD",

abstract = "Abstract This article presents a new bulk radiation damage model for p -type silicon for use in Synopsys Sentaurus TCAD. The model is shown to provide agreement between experiment and simulation for the voltage dependence of the leakage current and the charge collection efficiency, for fluences up to 8 × 1 0 15 1 MeV n eq ∕ cm 2 .",

keywords = "Silicon sensor, Silicon pixel detector, Radiation damage, TCAD, Device simulation",

author = "{\AA}. Folkestad and K. Akiba and Beuzekom, {M. van} and E. Buchanan and P. Collins and E. Dall{\textquoteright}Occo and Canto, {A. Di} and T. Evans and Lima, {V. Franco} and Pardi{\~n}as, {J. Garc{\'i}a} and H. Schindler and M. Vicente and Diaz, {M. Vieites} and M. Williams",

year = "2017",

month = dec,

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doi = "10.1016/j.nima.2017.08.042",

language = "English",

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Folkestad, Å, Akiba, K, Beuzekom, MV, Buchanan, E, Collins, P, Dall’Occo, E, Canto, AD, Evans, T, Lima, VF, Pardiñas, JG, Schindler, H, Vicente, M, Diaz, MV & Williams, M 2017, 'Development of a silicon bulk radiation damage model for Sentaurus TCAD', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 874, pp. 94-102. https://doi.org/10.1016/j.nima.2017.08.042

Development of a silicon bulk radiation damage model for Sentaurus TCAD. / Folkestad, Å.; Akiba, K.; Beuzekom, M. van et al.

In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 874, 01.12.2017, p. 94-102.

Research output: Contribution to journal › Article (Academic Journal) › peer-review

TY - JOUR

T1 - Development of a silicon bulk radiation damage model for Sentaurus TCAD

AU - Folkestad, Å.

AU - Akiba, K.

AU - Beuzekom, M. van

AU - Buchanan, E.

AU - Collins, P.

AU - Dall’Occo, E.

AU - Canto, A. Di

AU - Evans, T.

AU - Lima, V. Franco

AU - Pardiñas, J. García

AU - Schindler, H.

AU - Vicente, M.

AU - Diaz, M. Vieites

AU - Williams, M.

PY - 2017/12/1

Y1 - 2017/12/1

N2 - Abstract This article presents a new bulk radiation damage model for p -type silicon for use in Synopsys Sentaurus TCAD. The model is shown to provide agreement between experiment and simulation for the voltage dependence of the leakage current and the charge collection efficiency, for fluences up to 8 × 1 0 15 1 MeV n eq ∕ cm 2 .

AB - Abstract This article presents a new bulk radiation damage model for p -type silicon for use in Synopsys Sentaurus TCAD. The model is shown to provide agreement between experiment and simulation for the voltage dependence of the leakage current and the charge collection efficiency, for fluences up to 8 × 1 0 15 1 MeV n eq ∕ cm 2 .

KW - Silicon sensor

KW - Silicon pixel detector

KW - Radiation damage

KW - TCAD

KW - Device simulation

U2 - 10.1016/j.nima.2017.08.042

DO - 10.1016/j.nima.2017.08.042

M3 - Article (Academic Journal)

VL - 874

SP - 94

EP - 102

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

SN - 0168-9002

ER -

Development of a silicon bulk radiation damage model for Sentaurus TCAD

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Bristol Consolidated Grant 2015-9

LHCb upgrade bridging funds

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