Development of a silicon bulk radiation damage model for Sentaurus TCAD

Å. Folkestad, K. Akiba, M. van Beuzekom, E. Buchanan, P. Collins, E. Dall’Occo, A. Di Canto, T. Evans, V. Franco Lima, J. García Pardiñas, H. Schindler, M. Vicente, M. Vieites Diaz, M. Williams

Research output: Contribution to journalArticle (Academic Journal)peer-review

7 Citations (Scopus)
398 Downloads (Pure)


Abstract This article presents a new bulk radiation damage model for p -type silicon for use in Synopsys Sentaurus TCAD. The model is shown to provide agreement between experiment and simulation for the voltage dependence of the leakage current and the charge collection efficiency, for fluences up to 8 × 1 0 15 1 MeV n eq ∕ cm 2 .
Original languageEnglish
Pages (from-to)94-102
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Early online date5 Sep 2017
Publication statusPublished - 1 Dec 2017


  • Silicon sensor
  • Silicon pixel detector
  • Radiation damage
  • TCAD
  • Device simulation


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