Development of an RF IV waveform based stress test procedure for use on GaN HFETs

This paper reports on the development of an RF IV waveform based stress test procedure. DC and low-voltage RF characterisation was carried out before and after high power RF stress. RF waveform measurements showed that the exact change in the RF load line induced during RF degradation cannot be directly inferred from the DC or low power RF measurement. The RF degradation takes the form of a knee-walkout, a small pinch-off shift consistent with charge trapping and defect generation, and in addition gate leakage occurs once the RF voltage exceeds a critical voltage. (C) 2012 Elsevier Ltd. All rights reserved.