Device-to-device coupling via lateral conduction within the epitaxy in C-doped AlGaN/GaN-on-Si HEMTs

null Manikant; Serge Karboyan; Michael J. Uren; Kean Boon Lee; Zaffar Zaidi; Peter A. Houston; Martin Kuball

Device-to-device coupling via lateral conduction within the epitaxy in C-doped AlGaN/GaN-on-Si HEMTs

Manikant, Serge Karboyan, Michael J. Uren, Kean Boon Lee, Zaffar Zaidi, Peter A. Houston, Martin Kuball

Research output: Contribution to conference › Conference Paper › peer-review

Abstract

Carbon doped AlGaN/GaN power switching devices can show parasitic lateral leakage within the epitaxial layer. Here we demonstrate that lateral leakage occurs outside the active area of the device resulting in device-size-dependent back-gating effects and cross coupling to adjacent devices. This can result in time dependent changes in on-resistance in devices located more than a millimeter away from the active device. We also show that the lateral leakage path is highly non-ohmic, displaying an unusual oscillatory relaxation process.

Original language	English
Publication status	Published - 1 Jan 2018
Event	2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018 - Austin, United States Duration: 7 May 2018 → 10 May 2018

Conference

Conference	2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018
Country/Territory	United States
City	Austin
Period	7/05/18 → 10/05/18

Keywords

Carbon doping
GaN HEMT
Lateral leakage
Substrate bias

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@conference{d2021cf3c5c243fe9568880b8f975ad5,

title = "Device-to-device coupling via lateral conduction within the epitaxy in C-doped AlGaN/GaN-on-Si HEMTs",

abstract = "Carbon doped AlGaN/GaN power switching devices can show parasitic lateral leakage within the epitaxial layer. Here we demonstrate that lateral leakage occurs outside the active area of the device resulting in device-size-dependent back-gating effects and cross coupling to adjacent devices. This can result in time dependent changes in on-resistance in devices located more than a millimeter away from the active device. We also show that the lateral leakage path is highly non-ohmic, displaying an unusual oscillatory relaxation process.",

keywords = "Carbon doping, GaN HEMT, Lateral leakage, Substrate bias",

author = "Manikant and Serge Karboyan and Uren, {Michael J.} and Lee, {Kean Boon} and Zaffar Zaidi and Houston, {Peter A.} and Martin Kuball",

year = "2018",

month = jan,

day = "1",

language = "English",

note = "2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018 ; Conference date: 07-05-2018 Through 10-05-2018",

}

Device-to-device coupling via lateral conduction within the epitaxy in C-doped AlGaN/GaN-on-Si HEMTs. / Manikant; Karboyan, Serge; Uren, Michael J. et al.
2018. Paper presented at 2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018, Austin, United States.

Research output: Contribution to conference › Conference Paper › peer-review

TY - CONF

T1 - Device-to-device coupling via lateral conduction within the epitaxy in C-doped AlGaN/GaN-on-Si HEMTs

AU - Manikant, null

AU - Karboyan, Serge

AU - Uren, Michael J.

AU - Lee, Kean Boon

AU - Zaidi, Zaffar

AU - Houston, Peter A.

AU - Kuball, Martin

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Carbon doped AlGaN/GaN power switching devices can show parasitic lateral leakage within the epitaxial layer. Here we demonstrate that lateral leakage occurs outside the active area of the device resulting in device-size-dependent back-gating effects and cross coupling to adjacent devices. This can result in time dependent changes in on-resistance in devices located more than a millimeter away from the active device. We also show that the lateral leakage path is highly non-ohmic, displaying an unusual oscillatory relaxation process.

AB - Carbon doped AlGaN/GaN power switching devices can show parasitic lateral leakage within the epitaxial layer. Here we demonstrate that lateral leakage occurs outside the active area of the device resulting in device-size-dependent back-gating effects and cross coupling to adjacent devices. This can result in time dependent changes in on-resistance in devices located more than a millimeter away from the active device. We also show that the lateral leakage path is highly non-ohmic, displaying an unusual oscillatory relaxation process.

KW - Carbon doping

KW - GaN HEMT

KW - Lateral leakage

KW - Substrate bias

UR - http://www.scopus.com/inward/record.url?scp=85050026091&partnerID=8YFLogxK

M3 - Conference Paper

AN - SCOPUS:85050026091

T2 - 2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018

Y2 - 7 May 2018 through 10 May 2018

ER -

Device-to-device coupling via lateral conduction within the epitaxy in C-doped AlGaN/GaN-on-Si HEMTs

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