Device-to-device coupling via lateral conduction within the epitaxy in C-doped AlGaN/GaN-on-Si HEMTs

Manikant, Serge Karboyan, Michael J. Uren, Kean Boon Lee, Zaffar Zaidi, Peter A. Houston, Martin Kuball

Research output: Contribution to conferenceConference Paper

Abstract

Carbon doped AlGaN/GaN power switching devices can show parasitic lateral leakage within the epitaxial layer. Here we demonstrate that lateral leakage occurs outside the active area of the device resulting in device-size-dependent back-gating effects and cross coupling to adjacent devices. This can result in time dependent changes in on-resistance in devices located more than a millimeter away from the active device. We also show that the lateral leakage path is highly non-ohmic, displaying an unusual oscillatory relaxation process.

Original languageEnglish
Publication statusPublished - 1 Jan 2018
Event2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018 - Austin, United States
Duration: 7 May 201810 May 2018

Conference

Conference2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018
CountryUnited States
CityAustin
Period7/05/1810/05/18

Keywords

  • Carbon doping
  • GaN HEMT
  • Lateral leakage
  • Substrate bias

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