Diamond micro-Raman thermometers for accurate gate temperature measurements

Roland B. Simon*, James W Pomeroy, Martin H H Kuball

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

27 Citations (Scopus)
397 Downloads (Pure)


Determining the peak channel temperature in AlGaN/GaN high electron mobility transistors and other devices with high accuracy is an important and challenging issue. A surface-sensitive thermometric technique is demonstrated, utilizing Raman thermography and diamond microparticles to measure the gate temperature. This technique enhances peak channel temperature estimation, especially when it is applied in combination with standard micro-Raman thermography. Its application to other metal-covered areas of devices, such as field plates is demonstrated. Furthermore, this technique can be readily applied to other material/device systems.
Original languageEnglish
Article number213503
Number of pages4
JournalApplied Physics Letters
Issue number21
Early online date28 May 2014
Publication statusPublished - May 2014

Structured keywords

  • CDTR


  • thermal-conductivity
  • AlGaN/GaN HEMTs
  • spectroscopy
  • degradation
  • films


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