Dielectric Thickness and Fin Width Dependent OFF-State Degradation in AlGaN/GaN SLCFETs

Akhil S. Kumar; Michael J Uren; Matthew D Smith; Martin Kuball; Justin Parke; H George Henry; Robert S. Howell

doi:10.1109/IRPS48203.2023.10118346

Dielectric Thickness and Fin Width Dependent OFF-State Degradation in AlGaN/GaN SLCFETs

Akhil S. Kumar^*, Michael J Uren, Matthew D Smith, Martin Kuball, Justin Parke, H George Henry, Robert S. Howell

^*Corresponding author for this work

School of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

2 Citations (Scopus)

87 Downloads (Pure)

Abstract

Accelerated OFF-State stressing of multichannel AlGaN/GaN Superlattice Castellated Field Effect Transistors (SLCFET) with varying dielectric thickness (di) and fin-width (Wfin) was studied using noise measurements. As di increased, the failure mechanism changed from an abrupt breakdown to gradual time dependent dielectric breakdown (TDDB). Smaller Wfin is found to extend lifetime compared to wider Wfin under such stressing condition. Percolation theory and associated trap generation during stressing can explain the observed behavior.

Original language	English
Title of host publication	2023 IEEE International Reliability Physics Symposium (IRPS)
Editors	Chris Connor
Place of Publication	IEEE Explore
Number of pages	4
ISBN (Electronic)	9781665456722
DOIs	https://doi.org/10.1109/IRPS48203.2023.10118346
Publication status	Published - 15 May 2023
Event	2023 IEEE International Reliability Physics Symposium (IRPS) - Hotel Hyatt Regency Monterey , Monterey, California, United States Duration: 26 Mar 2023 → 30 Mar 2023 https://www.irps.org/

Publication series

Name
ISSN (Print)	1541-7026
ISSN (Electronic)	1938-1891

Conference

Conference	2023 IEEE International Reliability Physics Symposium (IRPS)
Country/Territory	United States
City	Monterey, California
Period	26/03/23 → 30/03/23
Internet address	https://www.irps.org/

Research Groups and Themes

CDTR

Keywords

gallium nitride
SLCFET
TDDB
lifetime
reliability
degradation
step-stressing
noise-analysis
3D-TCAD
percolation theory
traps

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10.1109/IRPS48203.2023.10118346Licence: Unspecified

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This is the accepted author manuscript (AAM). The final published version (version of record) is available online via IEEE at https://ieeexplore.ieee.org/document/10118346. Please refer to any applicable terms of use of the publisher.
Accepted author manuscript, 519 KBLicence: CC BY

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@inproceedings{24c59c06bea94a67a2fadff36f911483,

title = "Dielectric Thickness and Fin Width Dependent OFF-State Degradation in AlGaN/GaN SLCFETs",

abstract = "Accelerated OFF-State stressing of multichannel AlGaN/GaN Superlattice Castellated Field Effect Transistors (SLCFET) with varying dielectric thickness (di) and fin-width (Wfin) was studied using noise measurements. As di increased, the failure mechanism changed from an abrupt breakdown to gradual time dependent dielectric breakdown (TDDB). Smaller Wfin is found to extend lifetime compared to wider Wfin under such stressing condition. Percolation theory and associated trap generation during stressing can explain the observed behavior.",

keywords = "gallium nitride, SLCFET, TDDB, lifetime, reliability, degradation, step-stressing, noise-analysis, 3D-TCAD, percolation theory, traps",

author = "Kumar, {Akhil S.} and Uren, {Michael J} and Smith, {Matthew D} and Martin Kuball and Justin Parke and Henry, {H George} and Howell, {Robert S.}",

year = "2023",

month = may,

day = "15",

doi = "10.1109/IRPS48203.2023.10118346",

language = "English",

isbn = "9781665456739",

editor = "Chris Connor",

booktitle = "2023 IEEE International Reliability Physics Symposium (IRPS)",

note = "2023 IEEE International Reliability Physics Symposium (IRPS) ; Conference date: 26-03-2023 Through 30-03-2023",

url = "https://www.irps.org/",

}

Kumar, AS, Uren, MJ , Smith, MD , Kuball, M, Parke, J, Henry, HG & Howell, RS 2023, Dielectric Thickness and Fin Width Dependent OFF-State Degradation in AlGaN/GaN SLCFETs. in C Connor (ed.), 2023 IEEE International Reliability Physics Symposium (IRPS). IEEE Explore, 2023 IEEE International Reliability Physics Symposium (IRPS), Monterey, California, United States, 26/03/23. https://doi.org/10.1109/IRPS48203.2023.10118346

TY - GEN

T1 - Dielectric Thickness and Fin Width Dependent OFF-State Degradation in AlGaN/GaN SLCFETs

AU - Kumar, Akhil S.

AU - Uren, Michael J

AU - Smith, Matthew D

AU - Kuball, Martin

AU - Parke, Justin

AU - Henry, H George

AU - Howell, Robert S.

PY - 2023/5/15

Y1 - 2023/5/15

N2 - Accelerated OFF-State stressing of multichannel AlGaN/GaN Superlattice Castellated Field Effect Transistors (SLCFET) with varying dielectric thickness (di) and fin-width (Wfin) was studied using noise measurements. As di increased, the failure mechanism changed from an abrupt breakdown to gradual time dependent dielectric breakdown (TDDB). Smaller Wfin is found to extend lifetime compared to wider Wfin under such stressing condition. Percolation theory and associated trap generation during stressing can explain the observed behavior.

AB - Accelerated OFF-State stressing of multichannel AlGaN/GaN Superlattice Castellated Field Effect Transistors (SLCFET) with varying dielectric thickness (di) and fin-width (Wfin) was studied using noise measurements. As di increased, the failure mechanism changed from an abrupt breakdown to gradual time dependent dielectric breakdown (TDDB). Smaller Wfin is found to extend lifetime compared to wider Wfin under such stressing condition. Percolation theory and associated trap generation during stressing can explain the observed behavior.

KW - gallium nitride

KW - SLCFET

KW - TDDB

KW - lifetime

KW - reliability

KW - degradation

KW - step-stressing

KW - noise-analysis

KW - 3D-TCAD

KW - percolation theory

KW - traps

U2 - 10.1109/IRPS48203.2023.10118346

DO - 10.1109/IRPS48203.2023.10118346

M3 - Conference Contribution (Conference Proceeding)

SN - 9781665456739

BT - 2023 IEEE International Reliability Physics Symposium (IRPS)

A2 - Connor, Chris

CY - IEEE Explore

T2 - 2023 IEEE International Reliability Physics Symposium (IRPS)

Y2 - 26 March 2023 through 30 March 2023

ER -

Dielectric Thickness and Fin Width Dependent OFF-State Degradation in AlGaN/GaN SLCFETs

Abstract

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