| Translated title of the contribution | Differentiation between C and Si related damage centres in 4H and 6H SiC by the use of 90-300 kV electron irradiation followed by low temperature photoluminescence microscopy |
|---|---|
| Original language | English |
| Pages (from-to) | 381 - 384 |
| Journal | Mater. Sci. Forum |
| Volume | 353-3 |
| Publication status | Published - 2000 |
Differentiation between C and Si related damage centres in 4H and 6H SiC by the use of 90-300 kV electron irradiation followed by low temperature photoluminescence microscopy
JW Steeds, F Carosella, GA Evans, MM Ismail, LR Danks, W Voegeli
Research output: Contribution to journal › Article (Academic Journal) › peer-review