Differentiation between C and Si related damage centres in 4H and 6H SiC by the use of 90-300 kV electron irradiation followed by low temperature photoluminescence microscopy

JW Steeds, F Carosella, GA Evans, MM Ismail, LR Danks, W Voegeli

Research output: Contribution to journalArticle (Academic Journal)

Original languageEnglish
Pages (from-to)381 - 384
JournalMater. Sci. Forum
Volume353-3
Publication statusPublished - 2000

Bibliographical note

Publisher: Trans Tech Publications

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