Dilute bismide alloys grown on GaAs and InP substrates for improved near- and mid-infrared semiconductor lasers

Christopher A Broderick, Wanshu Xiong, Stephen J. Sweeney, Eoin P. O’Reilly, Judy M Rorison

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

1 Citation (Scopus)
316 Downloads (Pure)

Abstract

We present an analysis of dilute bismide quantum well (QW) lasers grown on GaAs and InP substrates. Our theoretical analysis is based upon a 12-band kp Hamiltonian which directly incorporates the strong impact of Bi incorporation on the band structure using a band-anticrossing approach. For GaBiAs QWs grown on GaAs we analyse the device performance as a function of Bi composition, and quantify the potential to use GaBiAs alloys to realise highly efficient, temperature stable 1.55 m lasers. We compare our calculations to measured spontaneous emission (SE) and gain spectra for first-generation GaBiAs lasers and demonstrate quantitative agreement between theory and experiment. We also present a theoretical analysis of InGaBiAs alloys grown on InP substrates. We show that this material system is well suited to the development of mid-infrared lasers, and offers the potential to realise highly efficient InP-based diode lasers incorporating type-I QWs and emitting at > 3 m. We quantify the theoretical performance of this new class of mid-infrared lasers, and identify optimised structures for emission across the application-rich 3 – 5 m wavelength range. Our results highlight and quantify the potential of dilute bismide alloys to overcome several limitations associated with existing GaAsand InP-based near- and mid-infrared laser technologies.
Original languageEnglish
Title of host publication2016 18th International Conference on Transparent Optical Networks (ICTON 2016)
Subtitle of host publicationProceedings of a meeting held 10-12 July 2016, Trento, Italy
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages201-204
Number of pages4
ISBN (Print)9781509014682
DOIs
Publication statusPublished - Sep 2016
Event18th International Conference on Transparent Optical Networks - Trento, Italy
Duration: 10 Jul 201612 Jul 2016

Conference

Conference18th International Conference on Transparent Optical Networks
Abbreviated titleICTON
CountryItaly
CityTrento
Period10/07/1612/07/16

Keywords

  • Highly-mismatched semiconductors
  • dilute bismide alloys
  • long-wavelength semiconductor lasers

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