Dilute bismide alloys grown on GaAs and InP substrates for improved near- and mid-infrared semiconductor lasers

Christopher A Broderick; Wanshu Xiong; Stephen J. Sweeney; Eoin P. O’Reilly; Judy M Rorison

doi:10.1109/ICTON.2016.7550303

Dilute bismide alloys grown on GaAs and InP substrates for improved near- and mid-infrared semiconductor lasers

Christopher A Broderick, Wanshu Xiong, Stephen J. Sweeney, Eoin P. O’Reilly, Judy M Rorison

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

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Abstract

We present an analysis of dilute bismide quantum well (QW) lasers grown on GaAs and InP substrates. Our theoretical analysis is based upon a 12-band kp Hamiltonian which directly incorporates the strong impact of Bi incorporation on the band structure using a band-anticrossing approach. For GaBiAs QWs grown on GaAs we analyse the device performance as a function of Bi composition, and quantify the potential to use GaBiAs alloys to realise highly efficient, temperature stable 1.55 m lasers. We compare our calculations to measured spontaneous emission (SE) and gain spectra for first-generation GaBiAs lasers and demonstrate quantitative agreement between theory and experiment. We also present a theoretical analysis of InGaBiAs alloys grown on InP substrates. We show that this material system is well suited to the development of mid-infrared lasers, and offers the potential to realise highly efficient InP-based diode lasers incorporating type-I QWs and emitting at > 3 m. We quantify the theoretical performance of this new class of mid-infrared lasers, and identify optimised structures for emission across the application-rich 3 – 5 m wavelength range. Our results highlight and quantify the potential of dilute bismide alloys to overcome several limitations associated with existing GaAsand InP-based near- and mid-infrared laser technologies.

Original language	English
Title of host publication	2016 18th International Conference on Transparent Optical Networks (ICTON 2016)
Subtitle of host publication	Proceedings of a meeting held 10-12 July 2016, Trento, Italy
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	201-204
Number of pages	4
ISBN (Print)	9781509014682
DOIs	https://doi.org/10.1109/ICTON.2016.7550303
Publication status	Published - Sept 2016
Event	18th International Conference on Transparent Optical Networks - Trento, Italy Duration: 10 Jul 2016 → 12 Jul 2016

Conference

Conference	18th International Conference on Transparent Optical Networks
Abbreviated title	ICTON
Country/Territory	Italy
City	Trento
Period	10/07/16 → 12/07/16

Research Groups and Themes

Photonics and Quantum

Keywords

Highly-mismatched semiconductors
dilute bismide alloys
long-wavelength semiconductor lasers

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10.1109/ICTON.2016.7550303

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Broderick, C. A., Xiong, W., Sweeney, S. J., O’Reilly, E. P., & Rorison, J. M. (2016). Dilute bismide alloys grown on GaAs and InP substrates for improved near- and mid-infrared semiconductor lasers. In 2016 18th International Conference on Transparent Optical Networks (ICTON 2016): Proceedings of a meeting held 10-12 July 2016, Trento, Italy (pp. 201-204). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ICTON.2016.7550303

Broderick, Christopher A ; Xiong, Wanshu ; Sweeney, Stephen J. et al. / Dilute bismide alloys grown on GaAs and InP substrates for improved near- and mid-infrared semiconductor lasers. 2016 18th International Conference on Transparent Optical Networks (ICTON 2016): Proceedings of a meeting held 10-12 July 2016, Trento, Italy. Institute of Electrical and Electronics Engineers (IEEE), 2016. pp. 201-204

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title = "Dilute bismide alloys grown on GaAs and InP substrates for improved near- and mid-infrared semiconductor lasers",

abstract = "We present an analysis of dilute bismide quantum well (QW) lasers grown on GaAs and InP substrates. Our theoretical analysis is based upon a 12-band kp Hamiltonian which directly incorporates the strong impact of Bi incorporation on the band structure using a band-anticrossing approach. For GaBiAs QWs grown on GaAs we analyse the device performance as a function of Bi composition, and quantify the potential to use GaBiAs alloys to realise highly efficient, temperature stable 1.55 m lasers. We compare our calculations to measured spontaneous emission (SE) and gain spectra for first-generation GaBiAs lasers and demonstrate quantitative agreement between theory and experiment. We also present a theoretical analysis of InGaBiAs alloys grown on InP substrates. We show that this material system is well suited to the development of mid-infrared lasers, and offers the potential to realise highly efficient InP-based diode lasers incorporating type-I QWs and emitting at > 3 m. We quantify the theoretical performance of this new class of mid-infrared lasers, and identify optimised structures for emission across the application-rich 3 – 5 m wavelength range. Our results highlight and quantify the potential of dilute bismide alloys to overcome several limitations associated with existing GaAsand InP-based near- and mid-infrared laser technologies.",

keywords = "Highly-mismatched semiconductors, dilute bismide alloys, long-wavelength semiconductor lasers",

author = "Broderick, \{Christopher A\} and Wanshu Xiong and Sweeney, \{Stephen J.\} and O{\textquoteright}Reilly, \{Eoin P.\} and Rorison, \{Judy M\}",

year = "2016",

month = sep,

doi = "10.1109/ICTON.2016.7550303",

language = "English",

isbn = "9781509014682",

pages = "201--204",

booktitle = "2016 18th International Conference on Transparent Optical Networks (ICTON 2016)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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note = "18th International Conference on Transparent Optical Networks, ICTON ; Conference date: 10-07-2016 Through 12-07-2016",

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Broderick, CA, Xiong, W, Sweeney, SJ, O’Reilly, EP & Rorison, JM 2016, Dilute bismide alloys grown on GaAs and InP substrates for improved near- and mid-infrared semiconductor lasers. in 2016 18th International Conference on Transparent Optical Networks (ICTON 2016): Proceedings of a meeting held 10-12 July 2016, Trento, Italy. Institute of Electrical and Electronics Engineers (IEEE), pp. 201-204, 18th International Conference on Transparent Optical Networks, Trento, Italy, 10/07/16. https://doi.org/10.1109/ICTON.2016.7550303

Dilute bismide alloys grown on GaAs and InP substrates for improved near- and mid-infrared semiconductor lasers. / Broderick, Christopher A; Xiong, Wanshu; Sweeney, Stephen J. et al.
2016 18th International Conference on Transparent Optical Networks (ICTON 2016): Proceedings of a meeting held 10-12 July 2016, Trento, Italy. Institute of Electrical and Electronics Engineers (IEEE), 2016. p. 201-204.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Dilute bismide alloys grown on GaAs and InP substrates for improved near- and mid-infrared semiconductor lasers

AU - Broderick, Christopher A

AU - Xiong, Wanshu

AU - Sweeney, Stephen J.

AU - O’Reilly, Eoin P.

AU - Rorison, Judy M

PY - 2016/9

Y1 - 2016/9

N2 - We present an analysis of dilute bismide quantum well (QW) lasers grown on GaAs and InP substrates. Our theoretical analysis is based upon a 12-band kp Hamiltonian which directly incorporates the strong impact of Bi incorporation on the band structure using a band-anticrossing approach. For GaBiAs QWs grown on GaAs we analyse the device performance as a function of Bi composition, and quantify the potential to use GaBiAs alloys to realise highly efficient, temperature stable 1.55 m lasers. We compare our calculations to measured spontaneous emission (SE) and gain spectra for first-generation GaBiAs lasers and demonstrate quantitative agreement between theory and experiment. We also present a theoretical analysis of InGaBiAs alloys grown on InP substrates. We show that this material system is well suited to the development of mid-infrared lasers, and offers the potential to realise highly efficient InP-based diode lasers incorporating type-I QWs and emitting at > 3 m. We quantify the theoretical performance of this new class of mid-infrared lasers, and identify optimised structures for emission across the application-rich 3 – 5 m wavelength range. Our results highlight and quantify the potential of dilute bismide alloys to overcome several limitations associated with existing GaAsand InP-based near- and mid-infrared laser technologies.

AB - We present an analysis of dilute bismide quantum well (QW) lasers grown on GaAs and InP substrates. Our theoretical analysis is based upon a 12-band kp Hamiltonian which directly incorporates the strong impact of Bi incorporation on the band structure using a band-anticrossing approach. For GaBiAs QWs grown on GaAs we analyse the device performance as a function of Bi composition, and quantify the potential to use GaBiAs alloys to realise highly efficient, temperature stable 1.55 m lasers. We compare our calculations to measured spontaneous emission (SE) and gain spectra for first-generation GaBiAs lasers and demonstrate quantitative agreement between theory and experiment. We also present a theoretical analysis of InGaBiAs alloys grown on InP substrates. We show that this material system is well suited to the development of mid-infrared lasers, and offers the potential to realise highly efficient InP-based diode lasers incorporating type-I QWs and emitting at > 3 m. We quantify the theoretical performance of this new class of mid-infrared lasers, and identify optimised structures for emission across the application-rich 3 – 5 m wavelength range. Our results highlight and quantify the potential of dilute bismide alloys to overcome several limitations associated with existing GaAsand InP-based near- and mid-infrared laser technologies.

KW - Highly-mismatched semiconductors

KW - dilute bismide alloys

KW - long-wavelength semiconductor lasers

U2 - 10.1109/ICTON.2016.7550303

DO - 10.1109/ICTON.2016.7550303

M3 - Conference Contribution (Conference Proceeding)

SN - 9781509014682

SP - 201

EP - 204

BT - 2016 18th International Conference on Transparent Optical Networks (ICTON 2016)

PB - Institute of Electrical and Electronics Engineers (IEEE)

T2 - 18th International Conference on Transparent Optical Networks

Y2 - 10 July 2016 through 12 July 2016

ER -

Broderick CA, Xiong W, Sweeney SJ, O’Reilly EP, Rorison JM. Dilute bismide alloys grown on GaAs and InP substrates for improved near- and mid-infrared semiconductor lasers. In 2016 18th International Conference on Transparent Optical Networks (ICTON 2016): Proceedings of a meeting held 10-12 July 2016, Trento, Italy. Institute of Electrical and Electronics Engineers (IEEE). 2016. p. 201-204 Epub 2016 Jul 10. doi: 10.1109/ICTON.2016.7550303

Dilute bismide alloys grown on GaAs and InP substrates for improved near- and mid-infrared semiconductor lasers

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Keywords

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