We use scanning tunneling spectroscopy to show directly that the conduction band density of states (DOS) of GaAs1-xNx with low nitrogen (N) content x is enhanced about 0.5 eV above the band edge, followed by a decrease at higher energy. The structure of the measured DOS is in excellent agreement with calculations based on a Green's-function formalism taking into account different N environments. This analysis highlights the inclusion of N-N pairs and the validity of the Green's-function approach to describe the band structure of dilute nitride and related extreme semiconductor alloys.
|Journal||Physical Review B: Condensed Matter and Materials Physics|
|Publication status||Published - 7 Oct 2010|