Direct measurement and analysis of the conduction band density of states in diluted GaAs1-xNx alloys

L. Ivanova*, H. Eisele, M. P. Vaughan, Ph Ebert, A. Lenz, R. Timm, O. Schumann, L. Geelhaar, M. Dähne, S. Fahy, H. Riechert, E. P. O'Reilly

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

30 Citations (Scopus)

Abstract

We use scanning tunneling spectroscopy to show directly that the conduction band density of states (DOS) of GaAs1-xNx with low nitrogen (N) content x is enhanced about 0.5 eV above the band edge, followed by a decrease at higher energy. The structure of the measured DOS is in excellent agreement with calculations based on a Green's-function formalism taking into account different N environments. This analysis highlights the inclusion of N-N pairs and the validity of the Green's-function approach to describe the band structure of dilute nitride and related extreme semiconductor alloys.

Original languageEnglish
Article number161201
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume82
Issue number16
DOIs
Publication statusPublished - 7 Oct 2010

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