Direct measurement and analysis of the conduction band density of states in diluted GaAs1-xNx alloys

L. Ivanova; H. Eisele; M. P. Vaughan; Ph Ebert; A. Lenz; R. Timm; O. Schumann; L. Geelhaar; M. Dähne; S. Fahy; H. Riechert; E. P. O'Reilly

doi:10.1103/PhysRevB.82.161201

Direct measurement and analysis of the conduction band density of states in diluted GaAs_1-xN_x alloys

L. Ivanova^*, H. Eisele, M. P. Vaughan, Ph Ebert, A. Lenz, R. Timm, O. Schumann, L. Geelhaar, M. Dähne, S. Fahy, H. Riechert, E. P. O'Reilly

^*Corresponding author for this work

Department of Electrical & Electronic Engineering

Research output: Contribution to journal › Article (Academic Journal) › peer-review

33 Citations (Scopus)

Abstract

We use scanning tunneling spectroscopy to show directly that the conduction band density of states (DOS) of GaAs_1-xN_x with low nitrogen (N) content x is enhanced about 0.5 eV above the band edge, followed by a decrease at higher energy. The structure of the measured DOS is in excellent agreement with calculations based on a Green's-function formalism taking into account different N environments. This analysis highlights the inclusion of N-N pairs and the validity of the Green's-function approach to describe the band structure of dilute nitride and related extreme semiconductor alloys.

Original language	English
Article number	161201
Journal	Physical Review B: Condensed Matter and Materials Physics
Volume	82
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevB.82.161201
Publication status	Published - 7 Oct 2010

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Ivanova, L., Eisele, H., Vaughan, M. P., Ebert, P., Lenz, A., Timm, R., Schumann, O., Geelhaar, L., Dähne, M., Fahy, S., Riechert, H., & O'Reilly, E. P. (2010). Direct measurement and analysis of the conduction band density of states in diluted GaAs_1-xN_x alloys. Physical Review B: Condensed Matter and Materials Physics, 82(16), [161201]. https://doi.org/10.1103/PhysRevB.82.161201

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title = "Direct measurement and analysis of the conduction band density of states in diluted GaAs1-xNx alloys",

abstract = "We use scanning tunneling spectroscopy to show directly that the conduction band density of states (DOS) of GaAs1-xNx with low nitrogen (N) content x is enhanced about 0.5 eV above the band edge, followed by a decrease at higher energy. The structure of the measured DOS is in excellent agreement with calculations based on a Green's-function formalism taking into account different N environments. This analysis highlights the inclusion of N-N pairs and the validity of the Green's-function approach to describe the band structure of dilute nitride and related extreme semiconductor alloys.",

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Ivanova, L, Eisele, H, Vaughan, MP, Ebert, P, Lenz, A, Timm, R, Schumann, O, Geelhaar, L, Dähne, M, Fahy, S, Riechert, H & O'Reilly, EP 2010, 'Direct measurement and analysis of the conduction band density of states in diluted GaAs_1-xN_x alloys', Physical Review B: Condensed Matter and Materials Physics, vol. 82, no. 16, 161201. https://doi.org/10.1103/PhysRevB.82.161201

TY - JOUR

T1 - Direct measurement and analysis of the conduction band density of states in diluted GaAs1-xNx alloys

AU - Ivanova, L.

AU - Eisele, H.

AU - Vaughan, M. P.

AU - Ebert, Ph

AU - Lenz, A.

AU - Timm, R.

AU - Schumann, O.

AU - Geelhaar, L.

AU - Dähne, M.

AU - Fahy, S.

AU - Riechert, H.

AU - O'Reilly, E. P.

PY - 2010/10/7

Y1 - 2010/10/7

N2 - We use scanning tunneling spectroscopy to show directly that the conduction band density of states (DOS) of GaAs1-xNx with low nitrogen (N) content x is enhanced about 0.5 eV above the band edge, followed by a decrease at higher energy. The structure of the measured DOS is in excellent agreement with calculations based on a Green's-function formalism taking into account different N environments. This analysis highlights the inclusion of N-N pairs and the validity of the Green's-function approach to describe the band structure of dilute nitride and related extreme semiconductor alloys.

AB - We use scanning tunneling spectroscopy to show directly that the conduction band density of states (DOS) of GaAs1-xNx with low nitrogen (N) content x is enhanced about 0.5 eV above the band edge, followed by a decrease at higher energy. The structure of the measured DOS is in excellent agreement with calculations based on a Green's-function formalism taking into account different N environments. This analysis highlights the inclusion of N-N pairs and the validity of the Green's-function approach to describe the band structure of dilute nitride and related extreme semiconductor alloys.

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U2 - 10.1103/PhysRevB.82.161201

DO - 10.1103/PhysRevB.82.161201

M3 - Article (Academic Journal)

AN - SCOPUS:78149234047

SN - 1098-0121

VL - 82

JO - Physical Review B: Condensed Matter and Materials Physics

JF - Physical Review B: Condensed Matter and Materials Physics

IS - 16

M1 - 161201

ER -

Direct measurement and analysis of the conduction band density of states in diluted GaAs_1-xN_x alloys

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