Distinct magnesium incorporation behavior in laterally grown AlGaN

R Liu, A Bell, FA Ponce, D Cherns, H Amano, I Akasaki

Research output: Contribution to journalArticle (Academic Journal)peer-review

Abstract

Different magnesium incorporation behavior has been observed in heavily Mg-doped AlGaN epitaxial layers. The films were grown by metal-organic vapor phase epitaxy involving a lateral overgrowth technique on patterned sapphire substrates. TEM observations show that direct growth on sapphire exhibits pyramidal defects, while lateral overgrowth is homogeneous and free of structural defects. The orientation of the growth front significantly influences the microstructure, and the {0001} growth fact appears to be essential for the formation of the pyramidal defects. In addition, cylindrical and funnel-shaped nanopipes have been observed at dislocations with an edge component. The relationship between Mg segregation and these defects is discussed, and formation mechanisms are proposed taking into consideration the orientation of the growth front.
Translated title of the contributionDistinct magnesium incorporation behavior in laterally grown AlGaN
Original languageEnglish
Pages (from-to)27 - 32
JournalMaterial Research Society Symposium Proceedings
Volume743
Issue numberSymposium L – GaN and Related Alloys
Publication statusPublished - 2003

Bibliographical note

Editors: Wetzel C, Yu ET, Speck JS, Arakawa Y
ISBN: 155899680X
Publisher: Materials Research Society
Name and Venue of Conference: Symposium on GaN and Related Alloys, 2002 MRS Fall Meeting, Boston
Conference Organiser: Materials Research Society

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