Distinct magnesium incorporation behavior in laterally grown AlGaN

R Liu; A Bell; FA Ponce; D Cherns; H Amano; I Akasaki

Distinct magnesium incorporation behavior in laterally grown AlGaN

R Liu, A Bell, FA Ponce, D Cherns, H Amano, I Akasaki

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

Abstract

Different magnesium incorporation behavior has been observed in heavily Mg-doped AlGaN epitaxial layers. The films were grown by metal-organic vapor phase epitaxy involving a lateral overgrowth technique on patterned sapphire substrates. TEM observations show that direct growth on sapphire exhibits pyramidal defects, while lateral overgrowth is homogeneous and free of structural defects. The orientation of the growth front significantly influences the microstructure, and the {0001} growth fact appears to be essential for the formation of the pyramidal defects. In addition, cylindrical and funnel-shaped nanopipes have been observed at dislocations with an edge component. The relationship between Mg segregation and these defects is discussed, and formation mechanisms are proposed taking into consideration the orientation of the growth front.

Translated title of the contribution	Distinct magnesium incorporation behavior in laterally grown AlGaN
Original language	English
Pages (from-to)	27 - 32
Journal	Material Research Society Symposium Proceedings
Volume	743
Issue number	Symposium L – GaN and Related Alloys
Publication status	Published - 2003

Bibliographical note

Editors: Wetzel C, Yu ET, Speck JS, Arakawa Y
ISBN: 155899680X
Publisher: Materials Research Society
Name and Venue of Conference: Symposium on GaN and Related Alloys, 2002 MRS Fall Meeting, Boston
Conference Organiser: Materials Research Society

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title = "Distinct magnesium incorporation behavior in laterally grown AlGaN",

abstract = "Different magnesium incorporation behavior has been observed in heavily Mg-doped AlGaN epitaxial layers. The films were grown by metal-organic vapor phase epitaxy involving a lateral overgrowth technique on patterned sapphire substrates. TEM observations show that direct growth on sapphire exhibits pyramidal defects, while lateral overgrowth is homogeneous and free of structural defects. The orientation of the growth front significantly influences the microstructure, and the {0001} growth fact appears to be essential for the formation of the pyramidal defects. In addition, cylindrical and funnel-shaped nanopipes have been observed at dislocations with an edge component. The relationship between Mg segregation and these defects is discussed, and formation mechanisms are proposed taking into consideration the orientation of the growth front.",

author = "R Liu and A Bell and FA Ponce and D Cherns and H Amano and I Akasaki",

note = "Editors: Wetzel C, Yu ET, Speck JS, Arakawa Y ISBN: 155899680X Publisher: Materials Research Society Name and Venue of Conference: Symposium on GaN and Related Alloys, 2002 MRS Fall Meeting, Boston Conference Organiser: Materials Research Society",

year = "2003",

language = "English",

volume = "743",

pages = "27 -- 32",

journal = "Material Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Cambridge University Press",

number = "Symposium L – GaN and Related Alloys",

}

TY - JOUR

T1 - Distinct magnesium incorporation behavior in laterally grown AlGaN

AU - Liu, R

AU - Bell, A

AU - Ponce, FA

AU - Cherns, D

AU - Amano, H

AU - Akasaki, I

N1 - Editors: Wetzel C, Yu ET, Speck JS, Arakawa Y ISBN: 155899680X Publisher: Materials Research Society Name and Venue of Conference: Symposium on GaN and Related Alloys, 2002 MRS Fall Meeting, Boston Conference Organiser: Materials Research Society

PY - 2003

Y1 - 2003

N2 - Different magnesium incorporation behavior has been observed in heavily Mg-doped AlGaN epitaxial layers. The films were grown by metal-organic vapor phase epitaxy involving a lateral overgrowth technique on patterned sapphire substrates. TEM observations show that direct growth on sapphire exhibits pyramidal defects, while lateral overgrowth is homogeneous and free of structural defects. The orientation of the growth front significantly influences the microstructure, and the {0001} growth fact appears to be essential for the formation of the pyramidal defects. In addition, cylindrical and funnel-shaped nanopipes have been observed at dislocations with an edge component. The relationship between Mg segregation and these defects is discussed, and formation mechanisms are proposed taking into consideration the orientation of the growth front.

AB - Different magnesium incorporation behavior has been observed in heavily Mg-doped AlGaN epitaxial layers. The films were grown by metal-organic vapor phase epitaxy involving a lateral overgrowth technique on patterned sapphire substrates. TEM observations show that direct growth on sapphire exhibits pyramidal defects, while lateral overgrowth is homogeneous and free of structural defects. The orientation of the growth front significantly influences the microstructure, and the {0001} growth fact appears to be essential for the formation of the pyramidal defects. In addition, cylindrical and funnel-shaped nanopipes have been observed at dislocations with an edge component. The relationship between Mg segregation and these defects is discussed, and formation mechanisms are proposed taking into consideration the orientation of the growth front.

M3 - Article (Academic Journal)

SN - 0272-9172

VL - 743

SP - 27

EP - 32

JO - Material Research Society Symposium Proceedings

JF - Material Research Society Symposium Proceedings

IS - Symposium L – GaN and Related Alloys

ER -

Distinct magnesium incorporation behavior in laterally grown AlGaN

Abstract

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