@inproceedings{501a6261c63a4dabbada09fb2e2201aa,
title = "Disturbed and scattered: The Path of thermal conduction through diamond lattice",
abstract = "With more phonons carrying the energy in the lattice, the phonon density of states in diamond extends to a much higher frequencies than that of any other material. This is related to the Debye temperature of diamond, being the highest of any bulk materials and of having the highest sound velocity of any known bulk materials. However, the thermal conductivity not only depends on the number of phonons and how fast they are, but also on how long they can travel without being disturbed or scattered. The measurement of this length of travel is the Mean Free Path of the phonons, l, which depends on the number of phonons in the lattice through the 3-phonon processes (Normal and Umpklapp), and the imperfections in the lattice (boundaries, grain boundaries, non sp3 bonds, isotopes, impurities, extended defects, dislocations, etc.). Consequently, the real world thermal conductivity of a given piece of diamond will depend on the quality of the lattice, yielding values from 1 W/m°K (ultra-nanocrystalline diamond) to more than 3400 W/m°K for isotopically pure single crystal diamond.",
keywords = "diamond, dislocations, extended defects, grain boundaries, nanostructured materials, phonons, thermal conductivity, thermal diffusivity, umklapp process, 3-phonon processes, C, Debye temperature, boundaries, bulk materials, diamond lattice, impurities, isotopes, lattice imperfections, mean free path, nonsp3 bonds, normal process, phonon density, thermal conduction, umpklapp process, Conductivity, Conductivity measurement, Diamond, Mathematical model, Phonons, Temperature measurement, Thermal conductivity, CVD diamond, defect density, thermal interface, thermal management",
author = "Firooz Faili and William Huang and Julian Calvo and Martin Kuball and Daniel Twitchen",
year = "2016",
month = jul,
day = "20",
doi = "10.1109/ITHERM.2016.7517675",
language = "English",
isbn = "9781467381222",
series = "IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)",
publisher = "Institute of Electrical and Electronics Engineers (IEEE)",
pages = "1133--1138",
booktitle = "2016 15th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)",
address = "United States",
note = "15th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2016 ; Conference date: 31-05-2016 Through 03-06-2016",
}