Dominant Mobility Modulation by the Electric Field Effect at the LaAlO3/SrTiO3 Interface

C. Bell*, S. Harashima, Y. Kozuka, M. Kim, B. G. Kim, Y. Hikita, H. Y. Hwang, Chris Bell

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)

202 Citations (Scopus)


Caviglia et al. [Nature (London) 456, 624 (2008)] have found that the superconducting LaAlO3/SrTiO3 interface can be gate modulated. A central issue is to determine the principal effect of the applied electric field. Using magnetotransport studies of a gated structure, we find that the mobility variation is almost 5 times that of the sheet carrier density. Furthermore, superconductivity can be suppressed at both positive and negative gate bias. These results indicate that the relative disorder strength strongly increases across the superconductor-insulator transition.

Original languageEnglish
Article number226802
Number of pages4
JournalPhysical Review Letters
Issue number22
Publication statusPublished - 27 Nov 2009


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