Double-gate suspended silicon nanowire transistors with tunable threshold voltage for chemical/biological sensing applications

Mohammad Adel Ghiass*, Yoshishige Tsuchiya, Faezeh Arab Hassani, Cecilia Dupre, Eric Ollier, Vladimir Cherman, Silvia Armini, Sebastian Bartsch, Dimitrios Tsamados, Hiroshi Mizuta

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

Abstract

A double-gate suspended silicon nanowire transistor (DGSSiNWT) is proposed for conduction-based chemical/biological sensing applications. The doping profile is uniform across the device without any junction. The suspended silicon nanowire (SiNW) provides a larger surface area that can be used to enhance the sensitivity. Two side gates, which work as the main gate and tuning gate, are separated from the SiNW by air gap and control the electrical conduction of the suspended structure. Using the tuning gate, we have optimized the operating point of device to achieve the highest sensitivity. The sensitivity, defined as the ratio of threshold voltage shift to tuning gate voltage variation, is observed to be up to 6.5. The estimated charge sensitivity of our devices is at least 20 times higher than the reported value for non-suspended SiNW transistors.

Original languageEnglish
Title of host publication2012 12th IEEE International Conference on Nanotechnology, NANO 2012
Place of PublicationBirmingham, UK
DOIs
Publication statusPublished - 2012
Event2012 12th IEEE International Conference on Nanotechnology, NANO 2012 - Birmingham, United Kingdom
Duration: 20 Aug 201223 Aug 2012

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Conference

Conference2012 12th IEEE International Conference on Nanotechnology, NANO 2012
CountryUnited Kingdom
CityBirmingham
Period20/08/1223/08/12

Bibliographical note

Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.

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