Dramatic mobility enhancements in doped SrTiO3 thin films by defect management

Y. Kozuka; Y. Hikita; C. Bell; H. Y. Hwang; Chris Bell

doi:10.1063/1.3457994

Dramatic mobility enhancements in doped SrTiO3 thin films by defect management

Y. Kozuka^*, Y. Hikita, C. Bell, H. Y. Hwang, Chris Bell

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

94 Citations (Scopus)

Abstract

We report bulk-quality n-type SrTiO3 (n-SrTiO3) thin films fabricated by pulsed laser deposition, with electron mobility as high as 6600 cm(2) V-1 s(-1) at 2 K and carrier density as low as 2.0x10(18) cm(-3) (similar to 0.02 at. %), far exceeding previous pulsed laser deposition films. This result stems from precise strontium and oxygen vacancy defect chemistry management, providing a general approach for defect control in complex oxide heteroepitaxy. (C) 2010 American Institute of Physics. [doi:10.1063/1.3457994]

Original language	English
Article number	012107
Number of pages	3
Journal	Applied Physics Letters
Volume	97
Issue number	1
DOIs	https://doi.org/10.1063/1.3457994
Publication status	Published - 5 Jul 2010

Keywords

carrier density
electron mobility
pulsed laser deposition
semiconductor epitaxial layers
semiconductor growth
strontium compounds
vacancies (crystal)
STRONTIUM-TITANATE
SINGLE-CRYSTALS
DIFFUSION
SURFACE
GROWTH
INTERFACE
INSULATOR
OXIDES

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@article{f320877681d1430ab7c1935339d51a96,

title = "Dramatic mobility enhancements in doped SrTiO3 thin films by defect management",

abstract = "We report bulk-quality n-type SrTiO3 (n-SrTiO3) thin films fabricated by pulsed laser deposition, with electron mobility as high as 6600 cm(2) V-1 s(-1) at 2 K and carrier density as low as 2.0x10(18) cm(-3) (similar to 0.02 at. %), far exceeding previous pulsed laser deposition films. This result stems from precise strontium and oxygen vacancy defect chemistry management, providing a general approach for defect control in complex oxide heteroepitaxy. (C) 2010 American Institute of Physics. [doi:10.1063/1.3457994]",

keywords = "carrier density, electron mobility, pulsed laser deposition, semiconductor epitaxial layers, semiconductor growth, strontium compounds, vacancies (crystal), STRONTIUM-TITANATE, SINGLE-CRYSTALS, DIFFUSION, SURFACE, GROWTH, INTERFACE, INSULATOR, OXIDES",

author = "Y. Kozuka and Y. Hikita and C. Bell and Hwang, {H. Y.} and Chris Bell",

year = "2010",

month = jul,

day = "5",

doi = "10.1063/1.3457994",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "1",

}

TY - JOUR

T1 - Dramatic mobility enhancements in doped SrTiO3 thin films by defect management

AU - Kozuka, Y.

AU - Hikita, Y.

AU - Bell, C.

AU - Hwang, H. Y.

AU - Bell, Chris

PY - 2010/7/5

Y1 - 2010/7/5

N2 - We report bulk-quality n-type SrTiO3 (n-SrTiO3) thin films fabricated by pulsed laser deposition, with electron mobility as high as 6600 cm(2) V-1 s(-1) at 2 K and carrier density as low as 2.0x10(18) cm(-3) (similar to 0.02 at. %), far exceeding previous pulsed laser deposition films. This result stems from precise strontium and oxygen vacancy defect chemistry management, providing a general approach for defect control in complex oxide heteroepitaxy. (C) 2010 American Institute of Physics. [doi:10.1063/1.3457994]

AB - We report bulk-quality n-type SrTiO3 (n-SrTiO3) thin films fabricated by pulsed laser deposition, with electron mobility as high as 6600 cm(2) V-1 s(-1) at 2 K and carrier density as low as 2.0x10(18) cm(-3) (similar to 0.02 at. %), far exceeding previous pulsed laser deposition films. This result stems from precise strontium and oxygen vacancy defect chemistry management, providing a general approach for defect control in complex oxide heteroepitaxy. (C) 2010 American Institute of Physics. [doi:10.1063/1.3457994]

KW - carrier density

KW - electron mobility

KW - pulsed laser deposition

KW - semiconductor epitaxial layers

KW - semiconductor growth

KW - strontium compounds

KW - vacancies (crystal)

KW - STRONTIUM-TITANATE

KW - SINGLE-CRYSTALS

KW - DIFFUSION

KW - SURFACE

KW - GROWTH

KW - INTERFACE

KW - INSULATOR

KW - OXIDES

U2 - 10.1063/1.3457994

DO - 10.1063/1.3457994

M3 - Article (Academic Journal)

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 012107

ER -

Dramatic mobility enhancements in doped SrTiO3 thin films by defect management

Abstract

Keywords

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