Dramatic mobility enhancements in doped SrTiO3 thin films by defect management

Y. Kozuka*, Y. Hikita, C. Bell, H. Y. Hwang, Chris Bell

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

74 Citations (Scopus)

Abstract

We report bulk-quality n-type SrTiO3 (n-SrTiO3) thin films fabricated by pulsed laser deposition, with electron mobility as high as 6600 cm(2) V-1 s(-1) at 2 K and carrier density as low as 2.0x10(18) cm(-3) (similar to 0.02 at. %), far exceeding previous pulsed laser deposition films. This result stems from precise strontium and oxygen vacancy defect chemistry management, providing a general approach for defect control in complex oxide heteroepitaxy. (C) 2010 American Institute of Physics. [doi:10.1063/1.3457994]

Original languageEnglish
Article number012107
Number of pages3
JournalApplied Physics Letters
Volume97
Issue number1
DOIs
Publication statusPublished - 5 Jul 2010

Keywords

  • carrier density
  • electron mobility
  • pulsed laser deposition
  • semiconductor epitaxial layers
  • semiconductor growth
  • strontium compounds
  • vacancies (crystal)
  • STRONTIUM-TITANATE
  • SINGLE-CRYSTALS
  • DIFFUSION
  • SURFACE
  • GROWTH
  • INTERFACE
  • INSULATOR
  • OXIDES

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