Dual-facet coupling of SOA array on 4-μm silicon-on-insulator implementing a hybrid integrated SOA-MZI wavelength converter

T. Alexoudi, D. Fitsios, G. T. Kanellos, N. Pleros, T. Tekin, M. Cherchi, S. Ylinen, M. Harjanne, M. Kapulainen, T. Aalto

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

1 Citation (Scopus)

Abstract

Hybrid integration on Silicon-on-Insulator (SOI) has emerged as a practical solution for compact and high-performance Photonic Integrated Circuits (PICs). It aims at combining the cost-effectiveness and CMOS-compatibility benefits of the low-loss SOI waveguide platform with the versatile active optical functions that can be realized by III-V photonic materials. The utilization of SOI, as an integration board, with Îm-scale dimensions allows for an excellent optical mode matching between silicon rib waveguides and active chips, allowing for minimal-loss coupling of the pre-fabricated IIIV components. While dual-facet coupling as well as III-V multi-element array bonding should be employed to enable enhanced active on-chip functions, so far only single side SOA bonding has been reported. In the present communication, we present a novel integration scheme that flip-chip bonds a 6-SOA array on 4-Îm thick SOI technology by coupling both lateral SOA facets to the waveguides, and report on the experimental results of wavelength conversion operation of a dual-element Semiconductor Optical Amplifier - Mach Zehnder Interferometer (SOA-MZI) circuit. Thermocompression bonding was applied to integrate the pre-fabricated SOAs on SOI, with vertical and horizontal alignment performed successfully at both SOA facets. The demonstrated device has a footprint of 8.2mm x 0.3mm and experimental evaluation revealed a 12Gb/s wavelength conversion operation capability with only 0.8dB power penalty for the first SOA-MZI-on-SOI circuit and a 10Gb/s wavelength conversion operation capability with 2 dB power penalty for the second SOA-MZI circuit. Our experiments show how dual facet integration can significantly increase the level of optical functionalities achievable by flip-chip hybrid technology and pave the way for more advanced and more densely PICs.

Original languageEnglish
Title of host publicationSilicon Photonics IX
PublisherSociety of Photo-Optical Instrumentation Engineers (SPIE)
Volume8990
ISBN (Print)9780819499035
DOIs
Publication statusPublished - 1 Jan 2014
EventSilicon Photonics IX - San Francisco, CA, United States
Duration: 3 Feb 20145 Feb 2014

Conference

ConferenceSilicon Photonics IX
CountryUnited States
CitySan Francisco, CA
Period3/02/145/02/14

Keywords

  • Dual-facet coupling
  • Hybrid integration
  • Mach-Zehnder Interferometer
  • Semiconductor Optical Amplifier
  • Thermocompression bonding
  • Wavelength Conversion

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