Dual-gate junction-less FET-detection for in-plane nano-electro-mechanical resonators

Faezeh Arab Hassani, Hiroshi Mizuta, Yoshishige Tsuchiya, Cecilia Dupre, Eric Ollier, Sebastian T. Bartsch, Adrian Mihai Ionescu

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

1 Citation (Scopus)

Abstract

This paper presents the high frequency characterization of a fabricated in-plane nano-electro-mechanical resonator in which the doubly clamped nano-wire acts as a suspended channel for a dual gate junction-less field-effect- transistor that is used for the resonance frequency detection. The applied DC biases to gates of the transistor were optimized to amplify the detected output signal of the resonator. The effects of changes in the applied DC biases and radio-frequency power on the resonance frequency and quality factor of the resonator have been investigated. Reduction of thermoelestic quality factor, QThermoelastic, is discussed in terms of elevated temperature in the thermally oxidized nano-wires with an increase in the applied radio-frequency power.

Original languageEnglish
Title of host publicationICICDT 2013 - International Conference on IC Design and Technology, Proceedings
Place of PublicationPavia, Italy
Pages115-118
Number of pages4
DOIs
Publication statusPublished - 2013
Event2013 International Conference on IC Design and Technology, ICICDT 2013 - Pavia, Italy
Duration: 29 May 201331 May 2013

Publication series

NameICICDT 2013 - International Conference on IC Design and Technology, Proceedings

Conference

Conference2013 International Conference on IC Design and Technology, ICICDT 2013
CountryItaly
CityPavia
Period29/05/1331/05/13

Bibliographical note

Copyright:
Copyright 2013 Elsevier B.V., All rights reserved.

Keywords

  • junction-less field-effect-transistor
  • Nano-electro-mechanical resonator
  • quality factor
  • resonance frequency

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