Dual-gate junction-less FET-detection for in-plane nano-electro-mechanical resonators

Faezeh Arab Hassani; Hiroshi Mizuta; Yoshishige Tsuchiya; Cecilia Dupre; Eric Ollier; Sebastian T. Bartsch; Adrian Mihai Ionescu

doi:10.1109/ICICDT.2013.6563316

Dual-gate junction-less FET-detection for in-plane nano-electro-mechanical resonators

Faezeh Arab Hassani, Hiroshi Mizuta, Yoshishige Tsuchiya, Cecilia Dupre, Eric Ollier, Sebastian T. Bartsch, Adrian Mihai Ionescu

Department of Electrical & Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

1 Citation (Scopus)

Abstract

This paper presents the high frequency characterization of a fabricated in-plane nano-electro-mechanical resonator in which the doubly clamped nano-wire acts as a suspended channel for a dual gate junction-less field-effect- transistor that is used for the resonance frequency detection. The applied DC biases to gates of the transistor were optimized to amplify the detected output signal of the resonator. The effects of changes in the applied DC biases and radio-frequency power on the resonance frequency and quality factor of the resonator have been investigated. Reduction of thermoelestic quality factor, Q_{Thermoelastic}, is discussed in terms of elevated temperature in the thermally oxidized nano-wires with an increase in the applied radio-frequency power.

Original language	English
Title of host publication	ICICDT 2013 - International Conference on IC Design and Technology, Proceedings
Place of Publication	Pavia, Italy
Pages	115-118
Number of pages	4
DOIs	https://doi.org/10.1109/ICICDT.2013.6563316
Publication status	Published - 2013
Event	2013 International Conference on IC Design and Technology, ICICDT 2013 - Pavia, Italy Duration: 29 May 2013 → 31 May 2013

Publication series

Name	ICICDT 2013 - International Conference on IC Design and Technology, Proceedings

Conference

Conference	2013 International Conference on IC Design and Technology, ICICDT 2013
Country	Italy
City	Pavia
Period	29/05/13 → 31/05/13

Bibliographical note

Copyright:
Copyright 2013 Elsevier B.V., All rights reserved.

Keywords

junction-less field-effect-transistor
Nano-electro-mechanical resonator
quality factor
resonance frequency

Access to Document

10.1109/ICICDT.2013.6563316

Link to publication in Scopus

Cite this

Hassani, F. A., Mizuta, H., Tsuchiya, Y., Dupre, C., Ollier, E., Bartsch, S. T., & Ionescu, A. M. (2013). Dual-gate junction-less FET-detection for in-plane nano-electro-mechanical resonators. In ICICDT 2013 - International Conference on IC Design and Technology, Proceedings (pp. 115-118). [6563316] (ICICDT 2013 - International Conference on IC Design and Technology, Proceedings).. https://doi.org/10.1109/ICICDT.2013.6563316

Hassani, Faezeh Arab ; Mizuta, Hiroshi ; Tsuchiya, Yoshishige ; Dupre, Cecilia ; Ollier, Eric ; Bartsch, Sebastian T. ; Ionescu, Adrian Mihai. / Dual-gate junction-less FET-detection for in-plane nano-electro-mechanical resonators. ICICDT 2013 - International Conference on IC Design and Technology, Proceedings. Pavia, Italy, 2013. pp. 115-118 (ICICDT 2013 - International Conference on IC Design and Technology, Proceedings).

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title = "Dual-gate junction-less FET-detection for in-plane nano-electro-mechanical resonators",

abstract = "This paper presents the high frequency characterization of a fabricated in-plane nano-electro-mechanical resonator in which the doubly clamped nano-wire acts as a suspended channel for a dual gate junction-less field-effect- transistor that is used for the resonance frequency detection. The applied DC biases to gates of the transistor were optimized to amplify the detected output signal of the resonator. The effects of changes in the applied DC biases and radio-frequency power on the resonance frequency and quality factor of the resonator have been investigated. Reduction of thermoelestic quality factor, QThermoelastic, is discussed in terms of elevated temperature in the thermally oxidized nano-wires with an increase in the applied radio-frequency power.",

keywords = "junction-less field-effect-transistor, Nano-electro-mechanical resonator, quality factor, resonance frequency",

author = "Hassani, {Faezeh Arab} and Hiroshi Mizuta and Yoshishige Tsuchiya and Cecilia Dupre and Eric Ollier and Bartsch, {Sebastian T.} and Ionescu, {Adrian Mihai}",

year = "2013",

doi = "10.1109/ICICDT.2013.6563316",

language = "English",

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series = "ICICDT 2013 - International Conference on IC Design and Technology, Proceedings",

pages = "115--118",

booktitle = "ICICDT 2013 - International Conference on IC Design and Technology, Proceedings",

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Hassani, FA, Mizuta, H, Tsuchiya, Y, Dupre, C, Ollier, E, Bartsch, ST & Ionescu, AM 2013, Dual-gate junction-less FET-detection for in-plane nano-electro-mechanical resonators. in ICICDT 2013 - International Conference on IC Design and Technology, Proceedings., 6563316, ICICDT 2013 - International Conference on IC Design and Technology, Proceedings, Pavia, Italy, pp. 115-118, 2013 International Conference on IC Design and Technology, ICICDT 2013, Pavia, Italy, 29/05/13. https://doi.org/10.1109/ICICDT.2013.6563316

Dual-gate junction-less FET-detection for in-plane nano-electro-mechanical resonators. / Hassani, Faezeh Arab; Mizuta, Hiroshi; Tsuchiya, Yoshishige; Dupre, Cecilia; Ollier, Eric; Bartsch, Sebastian T.; Ionescu, Adrian Mihai.

ICICDT 2013 - International Conference on IC Design and Technology, Proceedings. Pavia, Italy, 2013. p. 115-118 6563316 (ICICDT 2013 - International Conference on IC Design and Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Dual-gate junction-less FET-detection for in-plane nano-electro-mechanical resonators

AU - Hassani, Faezeh Arab

AU - Mizuta, Hiroshi

AU - Tsuchiya, Yoshishige

AU - Dupre, Cecilia

AU - Ollier, Eric

AU - Bartsch, Sebastian T.

AU - Ionescu, Adrian Mihai

PY - 2013

Y1 - 2013

N2 - This paper presents the high frequency characterization of a fabricated in-plane nano-electro-mechanical resonator in which the doubly clamped nano-wire acts as a suspended channel for a dual gate junction-less field-effect- transistor that is used for the resonance frequency detection. The applied DC biases to gates of the transistor were optimized to amplify the detected output signal of the resonator. The effects of changes in the applied DC biases and radio-frequency power on the resonance frequency and quality factor of the resonator have been investigated. Reduction of thermoelestic quality factor, QThermoelastic, is discussed in terms of elevated temperature in the thermally oxidized nano-wires with an increase in the applied radio-frequency power.

AB - This paper presents the high frequency characterization of a fabricated in-plane nano-electro-mechanical resonator in which the doubly clamped nano-wire acts as a suspended channel for a dual gate junction-less field-effect- transistor that is used for the resonance frequency detection. The applied DC biases to gates of the transistor were optimized to amplify the detected output signal of the resonator. The effects of changes in the applied DC biases and radio-frequency power on the resonance frequency and quality factor of the resonator have been investigated. Reduction of thermoelestic quality factor, QThermoelastic, is discussed in terms of elevated temperature in the thermally oxidized nano-wires with an increase in the applied radio-frequency power.

KW - junction-less field-effect-transistor

KW - Nano-electro-mechanical resonator

KW - quality factor

KW - resonance frequency

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DO - 10.1109/ICICDT.2013.6563316

M3 - Conference Contribution (Conference Proceeding)

AN - SCOPUS:84883318061

SN - 9781467347419

T3 - ICICDT 2013 - International Conference on IC Design and Technology, Proceedings

SP - 115

EP - 118

BT - ICICDT 2013 - International Conference on IC Design and Technology, Proceedings

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T2 - 2013 International Conference on IC Design and Technology, ICICDT 2013

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Hassani FA, Mizuta H, Tsuchiya Y, Dupre C, Ollier E, Bartsch ST et al. Dual-gate junction-less FET-detection for in-plane nano-electro-mechanical resonators. In ICICDT 2013 - International Conference on IC Design and Technology, Proceedings. Pavia, Italy. 2013. p. 115-118. 6563316. (ICICDT 2013 - International Conference on IC Design and Technology, Proceedings). https://doi.org/10.1109/ICICDT.2013.6563316