Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs

Serge Karboyan; Michael J Uren; Sara Martin Horcajo; James W Pomeroy; Indranil Chatterjee; Peter Moens; Abishek  Banerjee; Marcus Caesar; Martin Kuball

Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs

Serge Karboyan, Michael J Uren, Sara Martin Horcajo, James W Pomeroy, Indranil Chatterjee, Peter Moens, Abishek Banerjee, Marcus Caesar, Martin Kuball

School of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

8 Citations (Scopus)

380 Downloads (Pure)

Abstract

We report that dynamic Ron can increase with off-state stress time, only saturating after >300s. We show that a wide range of dynamic Ron behaviors is observed in small devices whereas large devices show behavior characteristic of an average over the small devices. This behavior can be explained by preferential vertical leakage paths separated by tens of microns. Long time constant dispersion is observed in some wafers but this is suppressed in later generation epitaxy.

Original language	English
Title of host publication	CS MANTECH 2016
Subtitle of host publication	International Conference on Compound Semiconductor Manufacturing Technology
Publisher	CS Mantech
Pages	211-214
Number of pages	4
Publication status	Published - 17 May 2016
Event	31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016 - Miami, United States Duration: 16 May 2016 → 19 May 2016

Conference

Conference	31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016
Country/Territory	United States
City	Miami
Period	16/05/16 → 19/05/16

Research Groups and Themes

CDTR

Keywords

HEMT
GaN
AlGaN
Power devices
Dynamic ON-resistance
device size

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This is the author accepted manuscript (AAM). The final published version (version of record) is available online via CS MANTECH at http://csmantech2016.conferencespot.org/62266gmi-1.3079367/t012-1.3079845/f012-1.3079847/a047-1.3079853/an047-1.3092027. Please refer to any applicable terms of use of the publisher.
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http://csmantech2016.conferencespot.org/62266gmi-1.3079367/t012-1.3079845/f012-1.3079847/a047-1.3079853/an047-1.3092027

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Karboyan, S., Uren, M. J., Martin Horcajo, S., Pomeroy, J. W., Chatterjee, I., Moens, P., Banerjee, A., Caesar, M., & Kuball, M. (2016). Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs. In CS MANTECH 2016: International Conference on Compound Semiconductor Manufacturing Technology (pp. 211-214). CS Mantech. http://csmantech2016.conferencespot.org/62266gmi-1.3079367/t012-1.3079845/f012-1.3079847/a047-1.3079853/an047-1.3092027

@inproceedings{6fc0835f950146128cc231519f1034ac,

title = "Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs",

abstract = "We report that dynamic Ron can increase with off-state stress time, only saturating after >300s. We show that a wide range of dynamic Ron behaviors is observed in small devices whereas large devices show behavior characteristic of an average over the small devices. This behavior can be explained by preferential vertical leakage paths separated by tens of microns. Long time constant dispersion is observed in some wafers but this is suppressed in later generation epitaxy.",

keywords = "HEMT, GaN, AlGaN, Power devices, Dynamic ON-resistance, device size",

author = "Serge Karboyan and Uren, {Michael J} and {Martin Horcajo}, Sara and Pomeroy, {James W} and Indranil Chatterjee and Peter Moens and Abishek Banerjee and Marcus Caesar and Martin Kuball",

year = "2016",

month = may,

day = "17",

language = "English",

pages = "211--214",

booktitle = "CS MANTECH 2016",

publisher = "CS Mantech",

note = "31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016 ; Conference date: 16-05-2016 Through 19-05-2016",

}

Karboyan, S, Uren, MJ, Martin Horcajo, S, Pomeroy, JW, Chatterjee, I, Moens, P, Banerjee, A, Caesar, M & Kuball, M 2016, Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs. in CS MANTECH 2016: International Conference on Compound Semiconductor Manufacturing Technology. CS Mantech, pp. 211-214, 31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016, Miami, United States, 16/05/16. <http://csmantech2016.conferencespot.org/62266gmi-1.3079367/t012-1.3079845/f012-1.3079847/a047-1.3079853/an047-1.3092027>

TY - GEN

T1 - Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs

AU - Karboyan, Serge

AU - Uren, Michael J

AU - Martin Horcajo, Sara

AU - Pomeroy, James W

AU - Chatterjee, Indranil

AU - Moens, Peter

AU - Banerjee, Abishek

AU - Caesar, Marcus

AU - Kuball, Martin

PY - 2016/5/17

Y1 - 2016/5/17

N2 - We report that dynamic Ron can increase with off-state stress time, only saturating after >300s. We show that a wide range of dynamic Ron behaviors is observed in small devices whereas large devices show behavior characteristic of an average over the small devices. This behavior can be explained by preferential vertical leakage paths separated by tens of microns. Long time constant dispersion is observed in some wafers but this is suppressed in later generation epitaxy.

AB - We report that dynamic Ron can increase with off-state stress time, only saturating after >300s. We show that a wide range of dynamic Ron behaviors is observed in small devices whereas large devices show behavior characteristic of an average over the small devices. This behavior can be explained by preferential vertical leakage paths separated by tens of microns. Long time constant dispersion is observed in some wafers but this is suppressed in later generation epitaxy.

KW - HEMT

KW - GaN

KW - AlGaN

KW - Power devices

KW - Dynamic ON-resistance

KW - device size

UR - http://www.scopus.com/inward/record.url?scp=84978877834&partnerID=8YFLogxK

M3 - Conference Contribution (Conference Proceeding)

AN - SCOPUS:84978877834

SP - 211

EP - 214

BT - CS MANTECH 2016

PB - CS Mantech

T2 - 31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016

Y2 - 16 May 2016 through 19 May 2016

ER -

Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs

Abstract

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Research Groups and Themes

Keywords

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