Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs

Serge Karboyan, Michael J Uren, Sara Martin Horcajo, James W Pomeroy, Indranil Chatterjee, Peter Moens, Abishek Banerjee, Marcus Caesar, Martin Kuball

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

5 Citations (Scopus)
229 Downloads (Pure)

Abstract

We report that dynamic Ron can increase with off-state stress time, only saturating after >300s. We show that a wide range of dynamic Ron behaviors is observed in small devices whereas large devices show behavior characteristic of an average over the small devices. This behavior can be explained by preferential vertical leakage paths separated by tens of microns. Long time constant dispersion is observed in some wafers but this is suppressed in later generation epitaxy.
Original languageEnglish
Title of host publicationCS MANTECH 2016
Subtitle of host publicationInternational Conference on Compound Semiconductor Manufacturing Technology
PublisherCS Mantech
Pages211-214
Number of pages4
Publication statusPublished - 17 May 2016
Event31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016 - Miami, United States
Duration: 16 May 201619 May 2016

Conference

Conference31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016
CountryUnited States
CityMiami
Period16/05/1619/05/16

Structured keywords

  • CDTR

Keywords

  • HEMT
  • GaN
  • AlGaN
  • Power devices
  • Dynamic ON-resistance
  • device size

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