Dynamic switching response of semiconductor ring lasers to NRZ and RZ injection signals

G Yuan; Z Wang; S Yu

doi:10.1109/LPT.2008.921112

Dynamic switching response of semiconductor ring lasers to NRZ and RZ injection signals

G Yuan, Z Wang, S Yu

Department of Electrical & Electronic Engineering

Research output: Contribution to journal › Article (Academic Journal) › peer-review

9 Citations (Scopus)

Abstract

Dynamic response of semiconductor ring lasers (SRLs) to external optical injection with nonreturn-to-zero (NRZ) and return-to-zero (RZ) waveforms is investigated using a model including linear and nonlinear mode coupling. The switching characteristics are simulated under various device sizes, injection power levels, and frequency detuning. For NRZ, the switching time reduces with decreasing SRL radius, which has a reasonable agreement with the current experimental results. It is also demonstrated that RZ pulse with duration of several picoseconds can reliably switch 6-mum radius SRL over a detuning range of more than 100 GHz, with the end state self-sustained after switching

Translated title of the contribution	Dynamic switching response of semiconductor ring lasers to NRZ and RZ injection signals
Original language	English
Pages (from-to)	785 - 787
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	20 (10)
DOIs	https://doi.org/10.1109/LPT.2008.921112
Publication status	Published - May 2008

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Publisher: IEEE

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@article{0432ad512f854ea29481931974aee5ed,

title = "Dynamic switching response of semiconductor ring lasers to NRZ and RZ injection signals",

abstract = "Dynamic response of semiconductor ring lasers (SRLs) to external optical injection with nonreturn-to-zero (NRZ) and return-to-zero (RZ) waveforms is investigated using a model including linear and nonlinear mode coupling. The switching characteristics are simulated under various device sizes, injection power levels, and frequency detuning. For NRZ, the switching time reduces with decreasing SRL radius, which has a reasonable agreement with the current experimental results. It is also demonstrated that RZ pulse with duration of several picoseconds can reliably switch 6-mum radius SRL over a detuning range of more than 100 GHz, with the end state self-sustained after switching",

author = "G Yuan and Z Wang and S Yu",

note = "Publisher: IEEE",

year = "2008",

month = may,

doi = "10.1109/LPT.2008.921112",

language = "English",

volume = "20 (10)",

pages = "785 -- 787",

journal = "IEEE Photonics Technology Letters",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

}

TY - JOUR

T1 - Dynamic switching response of semiconductor ring lasers to NRZ and RZ injection signals

AU - Yuan, G

AU - Wang, Z

AU - Yu, S

N1 - Publisher: IEEE

PY - 2008/5

Y1 - 2008/5

N2 - Dynamic response of semiconductor ring lasers (SRLs) to external optical injection with nonreturn-to-zero (NRZ) and return-to-zero (RZ) waveforms is investigated using a model including linear and nonlinear mode coupling. The switching characteristics are simulated under various device sizes, injection power levels, and frequency detuning. For NRZ, the switching time reduces with decreasing SRL radius, which has a reasonable agreement with the current experimental results. It is also demonstrated that RZ pulse with duration of several picoseconds can reliably switch 6-mum radius SRL over a detuning range of more than 100 GHz, with the end state self-sustained after switching

AB - Dynamic response of semiconductor ring lasers (SRLs) to external optical injection with nonreturn-to-zero (NRZ) and return-to-zero (RZ) waveforms is investigated using a model including linear and nonlinear mode coupling. The switching characteristics are simulated under various device sizes, injection power levels, and frequency detuning. For NRZ, the switching time reduces with decreasing SRL radius, which has a reasonable agreement with the current experimental results. It is also demonstrated that RZ pulse with duration of several picoseconds can reliably switch 6-mum radius SRL over a detuning range of more than 100 GHz, with the end state self-sustained after switching

U2 - 10.1109/LPT.2008.921112

DO - 10.1109/LPT.2008.921112

M3 - Article (Academic Journal)

VL - 20 (10)

SP - 785

EP - 787

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

ER -

Dynamic switching response of semiconductor ring lasers to NRZ and RZ injection signals

Abstract

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