Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25μm AlGaN/GaN HEMTs

M. Silvestri, M. J. Uren, M. Kuball

Research output: Contribution to journalArticle (Academic Journal)peer-review

19 Citations (Scopus)
406 Downloads (Pure)

Abstract

Using the dynamic transconductance frequency dispersion technique, we characterize unstressed and hot-electron stressed short-channel AlGaN/GaN high-electron-mobility transistors. The results reported in this letter demonstrate that the stress-induced degradation in dc and pulsed characteristics is unlikely to be ascribable to sizable trap generation at the AlGaN/GaN interface.
Original languageEnglish
Pages (from-to)1550-1552
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number11
DOIs
Publication statusPublished - Nov 2012

Structured keywords

  • CDTR

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