Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25μm AlGaN/GaN HEMTs

M. Silvestri; M. J. Uren; M. Kuball

doi:10.1109/LED.2012.2214200

Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25μm AlGaN/GaN HEMTs

M. Silvestri, M. J. Uren, M. Kuball

School of Physics

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Abstract

Using the dynamic transconductance frequency dispersion technique, we characterize unstressed and hot-electron stressed short-channel AlGaN/GaN high-electron-mobility transistors. The results reported in this letter demonstrate that the stress-induced degradation in dc and pulsed characteristics is unlikely to be ascribable to sizable trap generation at the AlGaN/GaN interface.

Original language	English
Pages (from-to)	1550-1552
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	11
DOIs	https://doi.org/10.1109/LED.2012.2214200
Publication status	Published - Nov 2012

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title = "Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25μm AlGaN/GaN HEMTs",

abstract = "Using the dynamic transconductance frequency dispersion technique, we characterize unstressed and hot-electron stressed short-channel AlGaN/GaN high-electron-mobility transistors. The results reported in this letter demonstrate that the stress-induced degradation in dc and pulsed characteristics is unlikely to be ascribable to sizable trap generation at the AlGaN/GaN interface.",

author = "M. Silvestri and Uren, \{M. J.\} and M. Kuball",

year = "2012",

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doi = "10.1109/LED.2012.2214200",

language = "English",

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T1 - Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25μm AlGaN/GaN HEMTs

AU - Silvestri, M.

AU - Uren, M. J.

AU - Kuball, M.

PY - 2012/11

Y1 - 2012/11

N2 - Using the dynamic transconductance frequency dispersion technique, we characterize unstressed and hot-electron stressed short-channel AlGaN/GaN high-electron-mobility transistors. The results reported in this letter demonstrate that the stress-induced degradation in dc and pulsed characteristics is unlikely to be ascribable to sizable trap generation at the AlGaN/GaN interface.

AB - Using the dynamic transconductance frequency dispersion technique, we characterize unstressed and hot-electron stressed short-channel AlGaN/GaN high-electron-mobility transistors. The results reported in this letter demonstrate that the stress-induced degradation in dc and pulsed characteristics is unlikely to be ascribable to sizable trap generation at the AlGaN/GaN interface.

U2 - 10.1109/LED.2012.2214200

DO - 10.1109/LED.2012.2214200

M3 - Article (Academic Journal)

SN - 0741-3106

VL - 33

SP - 1550

EP - 1552

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

ER -

Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25μm AlGaN/GaN HEMTs

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