Translated title of the contribution | Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence |
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Original language | English |
Pages (from-to) | 2691 - 2693 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 78 (18) |
DOIs | |
Publication status | Published - 30 Apr 2001 |
Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence
D Cherns, SJ Henley, FA Ponce
Research output: Contribution to journal › Article (Academic Journal) › peer-review
238
Citations
(Scopus)