Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence

D Cherns, SJ Henley, FA Ponce

Research output: Contribution to journalArticle (Academic Journal)peer-review

238 Citations (Scopus)
Translated title of the contributionEdge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence
Original languageEnglish
Pages (from-to)2691 - 2693
Number of pages3
JournalApplied Physics Letters
Volume78 (18)
DOIs
Publication statusPublished - 30 Apr 2001

Bibliographical note

Publisher: American Institute of Physics

Cite this