Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence

D Cherns, SJ Henley, FA Ponce

Research output: Contribution to journal › Article (Academic Journal) › peer-review

250 Citations (Scopus)

Translated title of the contribution	Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence
Original language	English
Pages (from-to)	2691 - 2693
Number of pages	3
Journal	Applied Physics Letters
Volume	78 (18)
DOIs	https://doi.org/10.1063/1.1369610
Publication status	Published - 30 Apr 2001

Publisher: American Institute of Physics

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title = "Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence",

author = "D Cherns and SJ Henley and FA Ponce",

note = "Publisher: American Institute of Physics",

year = "2001",

month = apr,

day = "30",

doi = "10.1063/1.1369610",

language = "English",

volume = "78 (18)",

pages = "2691 -- 2693",

journal = "Applied Physics Letters",

issn = "1077-3118",

publisher = "American Institute of Physics (AIP)",

}

TY - JOUR

T1 - Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence

AU - Cherns, D

AU - Henley, SJ

AU - Ponce, FA

N1 - Publisher: American Institute of Physics

PY - 2001/4/30

Y1 - 2001/4/30

U2 - 10.1063/1.1369610

DO - 10.1063/1.1369610

M3 - Article (Academic Journal)

SN - 1077-3118

VL - 78 (18)

SP - 2691

EP - 2693

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -