@inproceedings{f17bd11ff2f44ba984048482fd72e1e3,
title = "Effect of annealing temperature on diamond/Si interfacial structure",
abstract = "Transmission electron microscope (TEM) observation showed that a 25 nm thick intermediate layer was formed at the diamond/Si bonding interface without annealing, the intermediate layer thickness decreased with the annealing temperature. No cracking even in nanometer scale occurred even after high-temperature annealing at 800 °C.",
author = "Jianbo Liang and Yan Zhou and Satoshi Masuya and Filip Gucmann and Manikant Singh and James Pomeroy and Seongwoo Kim and Martin Kuball and Makoto Kasu and Naoteru Shigekawa",
year = "2019",
month = may,
day = "1",
doi = "10.23919/LTB-3D.2019.8735382",
language = "English",
series = "Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019",
publisher = "Institute of Electrical and Electronics Engineers (IEEE)",
booktitle = "Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019",
address = "United States",
note = "6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 ; Conference date: 21-05-2019 Through 25-05-2019",
}