Effect of annealing temperature on diamond/Si interfacial structure

Jianbo Liang, Yan Zhou, Satoshi Masuya, Filip Gucmann, Manikant Singh, James Pomeroy, Seongwoo Kim, Martin Kuball, Makoto Kasu, Naoteru Shigekawa

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

Abstract

Transmission electron microscope (TEM) observation showed that a 25 nm thick intermediate layer was formed at the diamond/Si bonding interface without annealing, the intermediate layer thickness decreased with the annealing temperature. No cracking even in nanometer scale occurred even after high-temperature annealing at 800 °C.

Original languageEnglish
Title of host publicationProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages1
ISBN (Electronic)9784904743072
DOIs
Publication statusPublished - 1 May 2019
Event6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 - Kanazawa, Ishikawa, Japan
Duration: 21 May 201925 May 2019

Publication series

NameProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

Conference

Conference6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
CountryJapan
CityKanazawa, Ishikawa
Period21/05/1925/05/19

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